journal article·1990-03

Characterisation of vacancy-like defects in III–V compound semiconductors using positron annihilation technique

A Sen Gupta

Bulletin of Materials Science· Volume 13· Issue 1-2
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Muon and positron interactions and applications

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