Many electron effects in semiconductor quantum dots

Semiconductor quantum dots (QDs) exhibit shell structures, very similar to atoms. Termed as ’artificial atoms’ by some, they are much larger (1 100 nm) than real atoms. One can study a variety of manyelectron effects in them, which are otherwise difficult to observe in a real atom. We have treated these effects within the local density approximation (LDA) and the Harbola-Sahni (HS) scheme. HS is free of the self-interaction error of the LDA. Our calculations have been performed in a three-dimensional quantum dot. We have carried out a study of the size and shape dependence of the level spacing. Scaling laws for the Hubbard ‘U’ are established.