journal article·1994-08

Deep level transient spectroscopy of anisotropic semiconductor GaTe

D. Pal, S. Pal, D. N. Bose

Bulletin of Materials Science· Volume 17· Issue 4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Solid-state spectroscopy and crystallography · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices

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References (8)

Show source-provided references
1. Bräunlich P, Kelly P and Fillard J-P 1979 inThermally stimulated relaxation in solids (ed.) P Bräunlich (Berlin: Springer-Verlag) pp 5010.1007/3-540-09595-0 ↗
2. Langer J M and Heinrich H 1985Phys. Rev. Lett. 55 141410.1103/PhysRevLett.55.1414 ↗
3. Mari B, Segura A, Casanovas A and Chevy A 1991Appl. Phys. A52 37310.1007/BF00323649 ↗
4. Martin P A, Hess K, Emanuel M and Coleman J J 1986J. Appl. Phys. 60 288210.1063/1.337073 ↗
5. Manfredotti C, Murri R, Rizzo A, Galassini S and Ruggiero L 1974Phys. Rev. B10 338710.1103/PhysRevB.10.3387 ↗
6. Shigetomi S, Ikari T, Nakashima H and Nishimura H 1991Phys. Status Solidi (a) 128 K9510.1002/pssa.2211280238 ↗
7. Telia A, Lepley B and Michel C 1991J. Appl. Phys. 69 715910.1063/1.347607 ↗
8. Tersoff J and Harrison W A 1987Phys. Rev. Lett. 58 236710.1103/PhysRevLett.58.2367 ↗