Efficient surface plasmon propagation on flexible free-standing and PMMA sandwiched graphene at optimized near to far-IR frequencies
Source abstract
Abstract
Graphene is an important material for the design of flexible and stretchable electronic and optoelectronic devices on account of its high Young’s modulus and generation of highly confined surface plasmons. In this work, we report the near to far-infrared (FIR) input frequencies required to generate the maximum electric field and magnetic field for the efficient propagation of surface plasmons for differently doped, micron-long, free-standing and poly(methyl methacrylate) (PMMA) sandwiched graphene sheets. The effect of the variation of doping of graphene, graphene sheet length and bent angle of the graphene sheet on the propagating electromagnetic field is analysed at the obtained input excitation frequencies using finite element method. Low attenuation of 0.034 and 0.234 dB along with relatively high confinement of ~6 and ~13 nm for the surface plasmons are achieved for micron-long, bent, highly doped, freely suspended and PMMA sandwiched graphene sheets at 193.5 and 190 THz, respectively. The knowledge of these optimized NIR–FIR input excitation frequencies producing maximum electric and magnetic field output at the end of graphene sheet is useful for designing compact and efficient graphene-based flexible and wearable devices for medical imaging applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Plasmonic and Surface Plasmon Research · Thermal Radiation and Cooling Technologies · Metamaterials and Metasurfaces Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (37)
Show source-provided references
1. Lee C, Wei X, Kysar J W and Hone J 2008 Science 321 38510.1126/science.1157996 ↗
2. Bolotin K I, Sikes K J, Jiang Z, Klima M, Fudenberg G, Hone J et al 2008 Solid State Commun. 146 35110.1016/j.ssc.2008.02.024 ↗
3. Balandin A A, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F et al 2008 Nano Lett. 8 90210.1021/nl0731872 ↗
4. Ghosh S, Calizo I, Teweldebrhan D, Pokatilov E P, Nika D L, Balandin A A et al 2008 Appl. Phys. Lett. 92 15191110.1063/1.2907977 ↗
5. Nair R R, Blake P, Grigorenko A N, Novoselov K S, Booth T J, Stauber T et al 2008 Science 320 130810.1126/science.1156965 ↗
6. Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X et al 2013 Nat. Photon. 7 39410.1038/nphoton.2013.57 ↗
7. Yan H, Li X, Chandra B, Tulevski G, Wu Y, Freitag M et al 2012 Nat. Nanotechnol. 7 33010.1038/nnano.2012.59 ↗
8. Xia S-X, Zhai X, Wang L-L, Lin Q and Wen S-C 2016 Opt. Express 24 1633610.1364/OE.24.016336 ↗
9. Thongrattanasiri S, Manjavacas A and Garcia de Abajo F J 2012 ACS Nano 6 176610.1021/nn204780e ↗
10. Thongrattanasiri S, Koppens F H L and de Abajo F J G 2012 Phys. Rev. Lett. 108 04740110.1103/PhysRevLett.108.047401 ↗
11. Guo B, Fang L, Zhang B and Gong J R 2011 Insciences J. 1 8010.5640/insc.010280 ↗
12. Fei Z, Rodin A S, Andreev G O, Bao W, McLeod A S, Wagner M et al 2012 Nature 487 8210.1038/nature11253 ↗
13. Tassin P, Koschny T, Kafesaki M and Soukoulis C M 2012 Nat. Photon. 6 25910.1038/nphoton.2012.27 ↗
14. Jablan M, Buljan H and Soljačić M 2009 Phys. Rev. B 80 24543510.1103/PhysRevB.80.245435 ↗
15. Li H, Anugrah Y, Koester S J and Li M 2012 Appl. Phys. Lett. 101 11111010.1063/1.4752435 ↗
16. Cheng Z, Tsang H K, Wang X, Chen X, Xu K and Xu J B 2013 Proc. IEEE Photonics Conference p 460
17. Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S et al 2009 Nature 457 70610.1038/nature07719 ↗
18. Hofmann A I, Cloutet E and Hadziioannou G 2018 Adv. Electron. Mater. 4 170041210.1002/aelm.201700412 ↗
19. Zhao Y, Duan J, He B and Tang Q 2019 J. Alloys Compd. 776 3110.1016/j.jallcom.2018.09.098 ↗
20. Dudem B, Kim D H, Bharat L K and Yu J S 2018 Appl. Energy 230 86510.1016/j.apenergy.2018.09.009 ↗
21. Koo J H, Kim D C, Shim H J, Kim T H and Kim D H 2018 Adv. Funct. Mater. 28 180183410.1002/adfm.201801834 ↗
22. Zhang M and Yeow J T 2018 ACS Appl. Mater. Interfaces 10 2660410.1021/acsami.8b06482 ↗
23. Li D, Hu Y, Zhang N, Lv Y, Lin J, Guo X et al 2017 ACS Appl. Mater. Interfaces 9 3610310.1021/acsami.7b10538 ↗
24. Lu W B, Zhu W, Xu H J, Ni Z H, Dong Z G and Cui T J 2013 Opt. Express 21 1047510.1364/OE.21.010475 ↗
25. Jang H, Park Y J, Chen X, Das T, Kim M S and Ahn J H 2016 Adv. Mater. 28 418410.1002/adma.201504245 ↗
26. Koppens F H L, Chang D E and García De A F J 2011 Nano Lett. 11 337010.1021/nl201771h ↗
27. Nikitin A Y, Guinea F, García-Vidal F J and Martín-Moreno L 2011 Phys. Rev. B 84 16140710.1103/PhysRevB.84.161407 ↗
28. Nikitin A Y, Guinea F, Garcia-Vidal F J and Martin-Moreno L 2012 Phys. Rev. B 85 08140510.1103/PhysRevB.85.081405 ↗
29. Gao W, Shu J, Qiu C and Xu Q 2012 ACS Nano 6 780610.1021/nn301888e ↗
30. Hajian H, Serebryannikov A E, Ghobadi A, Demirag Y, Butun B, Vandenbosch G A et al 2018 Sci. Rep. 8 1
31. Xiao T-H, Gan L and Li Z-Y 2015 Photonics Res. 3 30010.1364/PRJ.3.000300 ↗
32. Mikhailov S A and Ziegler K 2007 Phys. Rev. Lett. 99 01680310.1103/PhysRevLett.99.016803 ↗
33. Hanson G W 2008 J. Appl. Phys. 103 06430210.1063/1.2891452 ↗
34. Luo X, Qiu T, Lu W and Ni Z 2013 Mater. Sci. Eng. R Rep. 74 35110.1016/j.mser.2013.09.001 ↗
35. Jacob G and Raina G 2017 Proc. International Conference on Nextgen Electronic Technologies: Silicon to Software p 225
36. Vakil A and Engheta N 2011 Science 332 129110.1126/science.1202691 ↗
37. Canadija M, Brcic M and Brnic J 2013 Eng. Rev. 33 9