Electroless deposition, post annealing and characterization of nickel films on silicon
Source abstract
Abstract
Electroless deposition of nickel (EN) films on n-type silicon has been investigated under different process conditions. The interface between the film and substrate has been characterized for electrical properties by probing the contact resistances. X-ray diffraction and atomic force microscopy have been performed to obtain information about the structural and morphological details of the films. As a comparative study, nickel films have also been sputter deposited on silicon substrates. An as-deposited electroless film is observed to form non-ohmic contact while in a sputtered film prepared without the application of substrate heating, the formation of metal-insulating-semiconductor type junction is seen.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Electrodeposition and Electroless Coatings · Semiconductor materials and interfaces · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (15)
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