Current-voltage characteristics of Ag, Al, Ni-(n)CdTe junctions
Source abstract
Abstract
Schottky barriers of Ag, Al, Ni-(n)CdTe structures have been prepared and studied. The films were prepared by rf sputtering and doped with Cd metal. Diode ideality factor of these junctions are greater than unity and barrier height varies from 0.6–0.7 eV and are affected by room illumination. Photovoltaic effect of these junctions was very poor and fill factor below 0.4. Low doping concentration, high defect density, presence of an interfacial layer and presence of high series resistance are perceived to affect theJ—V characteristic.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and interfaces · Surface and Thin Film Phenomena · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (17)
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1. Anthony T C, Fahrenbruck A L, Peters M C and Bube R H 1985J. Appl. Phys. 57 4010.1063/1.334764 ↗
2. Chu T L, Chu S S, Panleau Y, Murthy K and Stokes E D 1983J. Appl. Phys. 54 39510.1063/1.331716 ↗
3. Das B M, Krishnaswamy S V, Petkii R, Swab P and Vedam P K 1984Solid State Electron. 27 32910.1016/0038-1101(84)90166-7 ↗
4. Gould R D and Bowler C J 1988Thin Solid Films 164 28110.1016/0040-6090(88)90150-2 ↗
5. Henish H K 1984Semiconductor contacts (Oxford: Clarendon Press) p. 23
6. Isett L C and Raychaudhuri P K 1984J. Appl. Phys. 55 360510.1063/1.332960 ↗
7. Loferski J J 1956J. Appl. Phys. 27 77710.1063/1.1722483 ↗
8. Mandal K C, Basu S and Bose D N 1986Solar Cells 8 2510.1016/0379-6787(86)90004-9 ↗
9. Ponpon J P and Siffert P 1977Rev. Phys. Appl. 12 42710.1051/rphysap:01977001202042700 ↗
10. Rhoderik E H 1978Metal-semiconductor contacts (Oxford: Clarendon Press) pp 7 & 87
11. Sarmah P C and Rahman A 1990Indian J. Phys. A64 21
12. Sarmah P C and Rahman A 1998Bull. Mater. Sci. 21 14910.1007/BF02927563 ↗
13. Sarmah P C and Rahman A 1999Indian J. Pure & Appl. Phys. 37 642
14. Sebastian P J 1992Thin Solid Films 221 23310.1016/0040-6090(92)90821-R ↗
15. Sze S M 1983Physics of semiconductor devices (New York: John Wiley & Sons) pp 259 & 805
16. Tommer M S 1988Thin Solid Films 164 29510.1016/0040-6090(88)90152-6 ↗
17. Wysocki J J and Rapport R 1960J. Appl. Phys. 31 57110.1063/1.1735630 ↗