Thermal and pressure dependence of mechanical properties for AlxIn1−xPySb1−y/GaSb system

Mechanical properties of AlxIn1−xPySb1−y quaternary alloy in zinc-blend structure lattice-matched to GaSb substrate are studied under the effects of temperature and pressure. The calculations are done based on empirical pseudopotential method modified with virtual crystal approximation joins compositional disorder impact. Such a model provides analytical data for the compositional dependence of the energy band gaps of AlxIn1−xPySb1−y/GaSb system. Our results are presented for the elastic constants (C11, C12, C44), elastic moduli (Bu, Y0, Cs), internal strain (ξ), bond stretching (α) and bond bending force (β) parameters. The alloy of interest is found to be a direct semiconductor within the composition range 0 ≤ x ≤ 0.15 and an indirect one for 0.15 < x ≤ 1. There is a good agreement between our results and the experimental data for its constituents (AlP, AlSb, InP and InSb) which give support for the calculated results of the studied quaternary alloys.