A comparative study regarding effects of interfacial ferroelectric Bi4Ti3O12 (BTO) layer on electrical characteristics of Au/n-Si structures

Present study focuses on the effects of interfacial ferroelectric BTO layer on the electrical characteristics of Au/n-Si structures, hence Au/n-Si (MS) and Au/BTO/n–Si (MFS) structures were fabricated and admittance measurements (capacitance–voltage: C–V and conductance–voltage: G/ω–V) of both structures were conducted between 10 kHz and 1 MHz at room temperature. Results showed that C–V and G/ω–V characteristics were affected not only by frequency but also through deposition of BTO layer. Some effects can be listed as sharper peaks in C–V plots, higher capacitance and conductance values. Structure’s series resistance (R s) also decreased due to BTO layer. Interface states (N ss) profiles of the structures were obtained using Hill–Coleman and high-low frequency capacitance (C HF–C LF). Some of the main electrical parameters were extracted from C −2–V plots using depletion capacitance approach. Furthermore, current–voltage characteristics of MS and MFS structures were presented.