Properties of group III–V semiconductor: BAs
Source abstract
Abstract
The structural, electronic, mechanical, thermal and optical properties of boron arsenide (BAs) semiconductor, which belongs to group III–V, has been studied using the first-principles approach. BAs is a binary semiconductor compound, which has a space group F-43m at ambient temperature. The structural and electronic properties of BAs are found to be in good agreement with the available experimental and theoretical results. Some of the mechanical properties are also in agreement with the data available. The thermal parameters such as Debye temperature, specific heat and Gruneisen parameter are analysed as functions of temperature and pressure.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · 2D Materials and Applications · Boron and Carbon Nanomaterials Research
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