DataVXJournal of Experimental NanosciencePaper
journal article·2010-12Open access

Fabrication of In-doped SnO2nanowire arrays and its field emission investigations

Ashok B. Bhise, Dattatray J. Late, B. Sathe, Mahendra A. More, Imtiaz S. Mulla, Vijayamohanan K. Pillai, Dilip S. Joag

Journal of Experimental Nanoscience· Volume 5· Issue 6
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Source abstract

Abstract

The field emission of In-doped SnO2 wire array has been performed in parallel plate diode configuration. A maximum current density of 60 µA/cm2 is drawn from the emitter at an applied field of 4 V/µm. The nonlinearity in the Fowler–Nordheim plot, characteristics of semiconductor emitter has been observed and explained on the basis of electron emission from both the conduction and the valence bands. The current stability recorded at a preset value of 1 µA is observed to be good. The high emission current density, good current stability and mechanically robust nature of the wires offer unprecedented advantages as promising cold cathodes for many potential applications based on field emission.
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Research context

Energy storageNanomaterialsElectronic materials

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · ZnO doping and properties · Semiconductor materials and devices

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References (27)

Show source-provided references
1. O.J. Lee, S.H. Jeong, and K.H. Lee,Fabrication of field emitter arrays of carbon nanotubes aligned on patterned substrates using self-assembly monolayer, Mater. Res. Soc. Proc. 772 (2003), pp. M7.710.1557/PROC-772-M7.7 ↗
2. 10.1002/adma.20040076510.1002/adma.200400765 ↗
3. 10.1007/s00339-008-4965-510.1007/s00339-008-4965-5 ↗
4. 10.1063/1.183355710.1063/1.1833557 ↗
5. 10.1088/0957-4484/17/12/04110.1088/0957-4484/17/12/041 ↗
6. Y.M. Fung, W.Y. Cheung, I.H. Wilson, J.B. Xu and S.P. Wong,Silicon field emitter array by fast anodization method, Mater. Res. Soc. Symp. Proc. 621 (2000), pp. R.5.410.1557/PROC-621-R5.4.1 ↗
7. 10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F10.1002/1521-4095(200008)12:16<1186::AID-ADMA1186>3.0.CO;2-F ↗
8. 10.1063/1.147814910.1063/1.1478149 ↗
9. 10.1002/1521-4095(200006)12:13<965::AID-ADMA965>3.0.CO;2-710.1002/1521-4095(200006)12:13<965::AID-ADMA965>3.0.CO;2-7 ↗
10. 10.1016/j.matlet.2006.02.05310.1016/j.matlet.2006.02.053 ↗
11. Wei BY · Sens. Actuators · 2004 · 101 · 8110.1016/j.snb.2004.02.028 ↗
12. 10.1021/nl034218610.1021/nl0342186 ↗
13. 10.1063/1.163951510.1063/1.1639515 ↗
14. 10.1063/1.150511210.1063/1.1505112 ↗
15. 10.1063/1.9879910.1063/1.98799 ↗
16. 10.1063/1.161289910.1063/1.1612899 ↗
17. 10.1103/PhysRevLett.89.19760210.1103/PhysRevLett.89.197602 ↗
18. 10.1016/j.apsusc.2006.01.00910.1016/j.apsusc.2006.01.009 ↗
19. 10.1098/rspa.1928.009110.1098/rspa.1928.0091 ↗
20. Gomer R · 1993
21. 10.1088/0022-3727/40/12/01310.1088/0022-3727/40/12/013 ↗
22. 10.1016/j.jcrysgro.2007.06.01710.1016/j.jcrysgro.2007.06.017 ↗
23. 10.1016/j.apsusc.2007.05.05810.1016/j.apsusc.2007.05.058 ↗
24. 10.1016/j.tsf.2007.12.16010.1016/j.tsf.2007.12.160 ↗
25. 10.1016/j.solidstatesciences.2009.02.01110.1016/j.solidstatesciences.2009.02.011 ↗
26. 10.1063/1.234527810.1063/1.2345278 ↗
27. 10.1063/1.193183110.1063/1.1931831 ↗