Sensitivity of Strained and Unstrained Structure Growth on GaAs (111)B

Compared with traditional (100) surfaces, the growth window for achieving high-quality photonic device structures on (111) GaAs by conventional molecular beam epitaxy (MBE) is very narrow. However, strained and unstrained structures produced on (111) substrates offer a new class of electronic and optoelectronic devices that benefit from the piezoelectric effect—a feature not accessible on symmetric (100) orientations—and additional material choices, such as InAs and InGaAs. In this work, we report on a series of investigations of strained and unstrained structures that include GaAs, AlGaAs/GaAs, and InAs/GaAs quantum layers deposited on epi-ready GaAs (111)B 2° → [\( 2\bar{1}\bar{1} \)] Si-doped substrates by conventional MBE.