The effects of the LaNiO3 interlayer in the preferential orientation and the dielectrical properties of Ba x Sr1− x TiO3 thin films

BaxSr1−xTiO3 (BST) thin films were grown on different substrates with or without LaNiO3 (LNO) layer by a modified sol–gel process. The BST thin films obtained have full perovskite phase with dense and crack-free surface. BST thin films on different substrates with LNO layer show (100) preferential orientation, the texture coefficient (TC) value is calculated to be about 42.7%, whereas those without LNO layer show a fairly reduced preferential orientation, the TC value is just about 24.8%. It is considered that the preferential orientation is induced by the interface stress between LNO and BST. Electrical property measurements showed that BST thin film with a LNO interlayer has lower capacitance and larger dielectric loss, which is due to smaller grains of the thin film.