Ferroelectric and Dielectric Properties of Lanthanum-Modified Bismuth Titanate Thin Films Obtained by the Polymeric Precursor Method
Source abstract
Abstract
Lanthanum-modified bismuth titanate, Bi4 − xLaxTi3O12 (BLT), thin films with a La concentration of 0.75 was grown on Pt/Ti/SiO2/Si substrates by using the polymeric precursor solution and spin-coating method. The scanning electron microscopy (SEM) showed rounded grains, which is not typical for these system. The BLT films showed well-saturated polarization-electric field curve which 2Pr = 41.4 μC/cm2 and Vc = 0.99 V. The capacitance dependence on the voltage is strongly nonlinear, confirming the ferroelectric properties of the film resulting from the domains switching. These properties make BLT a promising material for FERAM applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Acoustic Wave Resonator Technologies · Photorefractive and Nonlinear Optics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. R.E. Newnham, R.W. Wolf, and J.F. Dorrian, Materials Research Bulletin, 6, 1029 (1971).10.1016/0025-5408(71)90082-1 ↗
2. S.E. Cummins and L.E. Cross, Journal of Applied Physics, 39, 2268 (1968).10.1063/1.1656542 ↗
3. S. Sinharoy, H. Buhay, D.R. Lampe, and M.H. Francombe, Journal of Vacuum Science Technology, A, 10, 1554 (1992).10.1116/1.578044 ↗
4. M. Sedlar and M. Sayer, Ceramics International, 22, 241 (1996).10.1016/0272-8842(95)00098-4 ↗
5. T. Nakamura, R. Muhammet, M. Shimizu, and T. Shiosaki, Japanese Journal of Applied Physics, 32, 4086 (1993).10.1143/JJAP.32.4086 ↗
6. H. Wang, L.W. Fu, and S.X. Shang, Journal of Applied Physics, 73, 7693 (1993).
7. J. Si and S.B. Desu, Journal of Applied Physics, 73, 7910 (1993).10.1063/1.353943 ↗
8. S.D. Bu, B.S. Kang, B.H. Park, and T.W. Noh, Journal of the Korean Physical Society, 36, L9 (2000).
9. A.Z. Sim�es, A.H.M. Gonzalez, M.A. Zaghete, B. Stojanovic, A.A. Cavalheiro, P. Moeckli, N. Setter, and J. A. Varela, Ferroelectrics, 271, 33 (2002).10.1080/713716163 ↗
10. S.M. Zanetti, E.B. Ara�jo, E.R. Leite, E. Longo, and J.A. Varela, Materials Letters, 40, 33 (1999).10.1016/S0167-577X(99)00045-2 ↗
11. J.P. Kim, Y.S. Yang, S.H. Lee, H.J. Joo, and M.S. Jang, Journal of the Korean Physical Society, 35, 202 (1999).