Solid source MBE growth on InP-based DHBTs for high-speed data communication

Abstract We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGaAsP/InP collector, grown by solid source phosphorous MBE. High carbon doping levels in the base layer with excellent carrier mobility values allow the fabrication of devices with DC current gain ∼90 and cut-off frequencies beyond f t =265 GHz. Using this technology, integrated circuits, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 and 80 Gbit/s have been successfully fabricated.