MOVPE selectively grown GaAs nano-wires with self-aligned W side gate

Abstract We have fabricated GaAs/AlGaAs nano-wire field effect transistors (FETs) having novel self-aligned tungsten (W) gate electrode by using selective-area metal organic vapor-phase epitaxy (SA-MOVPE). Stacked film of SiO2/W was used as a mask for SA-MOVPE, where W is to form self-aligned gate on the side of the nano-wire structure, while SiO2 deposited on W is used to prevent lateral growth over the mask. With an appropriate design for the wire width, W, the distance, H, between the channel and the gate, FET action with good pinch-off and transfer characteristics was demonstrated at room temperature. Maximum transconductance gm of 600 μ S / μ m was achieved with a nanowire FET with channel width ( W = 80 nm ).