A Au/CuNiCoS 4 /p-Si photodiode: electrical and morphological characterization
Source abstract
Abstract
In this present work, CuNiCoS 4 thiospinel nanocrystals were synthesized by hot injection and characterized by X-ray diffractometry (XRD), high-resolution transmission electron microscopy (HR-TEM), and energy-dispersive X-ray spectroscopy (EDS). The XRD, EDS, and HR-TEM analyses confirmed the successful synthesis of CuNiCoS 4 . The obtained CuNiCoS 4 thiospinel nanocrystals were tested for photodiode and capacitance applications as interfacial layer between Au and p-type Si by measuring I – V and C – V characteristics. The fabricated Au/CuNiCoS 4 /p-Si device exhibited good rectifying properties, high photoresponse activity, low series resistance, and high shunt resistance. The C – V characteristics revealed that capacitance and conductance of the photodiode are voltage-and frequency-dependent. The fabricated device with CuNiCoS 4 thiospinel nanocrystals can be employed in high-efficiency optoelectronic applications.
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Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces · Quantum Dots Synthesis And Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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