Modification of Sb/Si(001) interface by incorporation of In(4 × 3) surface reconstruction

The formation of a Sb/Si(0 0 1) interface with artificial surface structure is achieved by Sb adsorption onto the In(4 × 3) surface phase at RT followed by annealing between 230 and 280 °C. RHEED and STM studies of the evolution of the surface morphology during annealing revealed that the new Sb-induced surface includes the reconstructed Si layer with fractional density of topmost Si atoms left after the initial In(4 × 3) surface is destroyed by Sb atoms. Upon annealing above ∼350 °C this structure changes into the conventional Sb(2 × 1) reconstruction accompanied by an increase in surface roughness.