Relative contributions of surface and grain boundary scattering to the spin-polarized electrons transport in the AlN/NiFe/AlN heterostructures
Source abstract
Abstract
Abstract When the film thickness approaches the electron mean free path (MFP), the relative contributions of surface/grain boundary scattering to the resistivity remain indefinitive. In this work, series of NiFe films sandwiched by AlN barriers were employed to study the transport properties. Surface scattering is found to provide the strongest contribution to the resistivity increase for very thin films ( d NiFe ≤ 10 nm). With the increase of the film thickness, the effect of the grain boundary scattering gradually increases while the surface scattering decreases. When the thickness of the film is over 30 nm, the former becomes predominant.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. Designed synthesis of materials for high-sensitivity geomagnetic sensors10.1063/1.3304101 ↗
2. Large enhancement of anisotropic magnetoresistance and thermal stability in Ta/NiFe/Ta trilayers with interfacial Pt addition10.1063/1.3334720 ↗
3. Bias voltage dependence of tunneling anisotropic magnetoresistance in magnetic tunnel junctions with MgO and Al2O3 tunnel barriers10.1103/PhysRevLett.99.226602 ↗
4. Theory of anisotropic magnetoresistance in atomic-sized ferromagnetic metal contacts10.1103/PhysRevB.79.140410 ↗
5. A spin-valve-like magnetoresistance of an antiferromagnet-based tunnel junction10.1038/nmat2983 ↗
6. Surface oxidation of permalloy thin films10.1103/PhysRevB.73.014420 ↗
7. Magnetic field sensors based on permalloy multilayers and nanogranular films10.1016/j.jmmm.2007.02.115 ↗
8. Thin film integrated AMR sensor for linear position measurements10.1016/j.sna.2008.03.014 ↗
9. Structural and magnetic modifications of Cr-implanted permalloy10.1103/PhysRevB.73.184410 ↗
10. Enhancement of the magnetic field sensitivity inAl2O3 encapsulated NiFe films with anisotropic magnetoresistance10.1063/1.3123807 ↗
11. Direct measurement of spin-dependent conduction-electron mean free paths in ferromagnetic metals10.1103/PhysRevLett.71.4023 ↗
12. On the theory of electric conduction through thin metallic films
13. The conductivity of thin metallic films according to the electron theory of metals10.1017/S0305004100019952 ↗
14. The mean free path of electrons in metals10.1080/00018735200101151 ↗
15. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces10.1103/PhysRevB.1.1382 ↗
16. Surface and grain boundary scattering studied in beveled polycrystalline thin copper films10.1116/1.1771666 ↗
17. Surface and grain-boundary scattering in nanometric Cu films10.1103/PhysRevB.81.155454 ↗
18. Influence of surface and grain-boundary scattering on the resistivity of copper in reduced dimensions10.1063/1.1703844 ↗
19. Electron grain boundary scattering and the resistivity of nanometric metallic structures10.1103/PhysRevB.82.113409 ↗
20. Influence of a superimposed film on the electrical conductivity of thin metal films10.1063/1.1710078 ↗
21. AES and XPS study of thin RF-sputtered Ta2O5 layers10.1016/0169-4332(94)00538-9 ↗
22. Calculations of electron inelastic mean free paths for 31 materials10.1002/sia.740111107 ↗
23. Stable encapsulation structures for Permalloy films10.1109/20.334298 ↗
24. E.M. Williams, P.G. Bischoff, D.A. Nepela, Thin film magnetic head with stress relief layering, U.S. Patent 5,949,627 (1999).