journal article·1989-10

Spatial distribution of damage caused by 6.4 eV photon irradiation in the gate oxide MOSFET's

M. Brox, F. Hofmann, W. Weber

Applied Surface Science· Volume 39· Issue 1-4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advancements in Semiconductor Devices and Circuit Design

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References (11)

Show source-provided references
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4. Kuznetsov · 1987
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6. Young · J. Appl. Phys. · 1979 · 50 · 636610.1063/1.325727 ↗
7. DiMaria · J. Appl. Phys. · 1985 · 57 · 121410.1063/1.334518 ↗
8. Schwerin · IEEE Trans. Electron Devices · 1987 · ED-34 · 249310.1109/T-ED.1987.23340 ↗
9. Sze · 1981
10. Oldham · IEEE Trans. Nucl. Sci. · 1987 · NS-34 · 118410.1109/TNS.1987.4337450 ↗
11. Groescheken · IEEE Trans. Electron Devices · 1984 · ED-31 · 4210.1109/T-ED.1984.21472 ↗