Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs
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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
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References (10)
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7. Hara · IEEE Electron Device Lett. · 1997 · EDL-18 · 6310.1109/55.553045 ↗
8. Heckingbottom · Radiat. Eff. · 1973 · 17 · 3110.1080/00337577308232594 ↗
9. Hara · J. Appl. Phys. · 1997 · 8110.1063/1.365277 ↗
10. Paper presented at 22nd Int. Symp. Compound Semiconductors