Writing cobalt FIB implantation into 6H:SiC

Abstract Focused ion beam implantation of cobalt at 35 keV into 6H:SiC is used to investigate a possible ion beam synthesis of CoSi 2 micro-structures. The patterns were studied using SEM and EDX measurements. The resistivity of the implanted test structures was determined as a function of dose, implantation and annealing temperatures. For room-temperature irradiated samples after a 1150 °C annealing resistivities of about 100 μΩ cm could be achieved and a diode-like behaviour influenced by parasitic resistors between structure and the bulk was found.