Accumulation of implanted arsenic at the interface during annealing on thermally oxidized Si and SiO2 covered Si
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OpenAlex topics: Integrated Circuits and Semiconductor Failure Analysis · Silicon Nanostructures and Photoluminescence · Semiconductor materials and interfaces
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References (7)
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1. Charitat · J. Appl. Phys. · 1984 · 55 · 286910.1063/1.333318 ↗
2. Patel · J. Appl. Phys. · 1963 · 34 · 278810.1063/1.1729812 ↗
3. Ion Implantation and Beam Processing
4. Mader · 1984 · 109
5. Yokota · Nucl. Instr. Methods B · 1989 · 39 · 36210.1016/0168-583X(89)90803-3 ↗
6. Hirao · J. Appl. Phys. · 1980 · 51 · 26210.1063/1.327418 ↗
7. Hu · J. Appl. Phys. · 1975 · 46 · 186910.1063/1.321883 ↗