journal article·1992-01

Structural approach to II–VI/GaAs heterostructures: precursor states and strain accommodation in the early stages of MBE growth

V.H. Etgens, R. Pinchaux, M. Sauvage-Simkin, J. Massies, N. Jedrecy, N. Greiser, A. Waldhauer, S. Tatarenko

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Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · GaN-based semiconductor devices and materials

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References (11)

Show source-provided references
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4. Jedrecy · J. Cryst. Growth · 1990 · 102 · 29310.1016/0022-0248(90)90914-7 ↗
5. Williams · Phys. Rev. B · 1991 · 43 · 500110.1103/PhysRevB.43.5001 ↗
6. Cohen-Solal · Appl. Phys. Lett. · 1986 · 49 · 151910.1063/1.97320 ↗
7. Tatarenko · 1988 · Vol. 944
8. Claverie · Rev. Sci. Instr. · 1989 · 60 · 236910.1063/1.1140722 ↗
9. Etgens · Surf. Sci. · 1991 · 251/252 · 47810.1016/0039-6028(91)91038-Y ↗
10. Etgens · 1991
11. V.H. Etgens, M. Sauvage-Simkin, R. Pinchaux, J. Massies, N. Jedrecy, A. Waldhauer and S. Tatarenko, to be published.