Effect of multiple-step annealing on the structural, optical and electrical properties of ZnO:In-N films
Source abstract
Abstract
Abstract The intrinsic defects in ZnO:In-N films can be regulated efficiently by multiple-step annealing together with the ambient atmosphere. Correspondingly, the conductivity of films changes from n to p-type, then to n-type (n → p → n). The experimental results indicate high-quality films annealed at 600 °C for 8 min in N2 ambience can be obtained by the analysis of X-ray diffraction (XRD) patterns and the concentrations of donor defects (Zni, VO) are dramatically decreased from Raman and photoluminescence (PL) spectra. When the films are further annealed in air for 3 min, the concentrations of acceptors such as oxygen interstitials (Oi) are increased slightly. Meanwhile, N-related acceptor complexes in the films are dominantly activated in terms of relative X-ray photoelectron spectroscopy (XPS) peak area ratio of P1 (395.5 eV) and P2 (397.3 eV) to P3 (403.5 eV), which plays an important role in realizing the conversion of the ZnO p-type conductivity. Noted that the p-type ZnO:In-N films with the hole concentration of 1017 cm−3 can be obtained in this way.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (45)
Show source-provided references
1. Optically pumped lasing of ZnO at room temperature10.1063/1.118824 ↗
2. Combustion synthesized zinc oxide electron-transport layers for efficient and stable perovskite solar cells10.1002/adfm.201900265 ↗
3. ZnO-based deep-ultraviolet light-emitting devices10.1088/1674-1056/26/4/047703 ↗
4. A novel photoelectrochemical immunosensor by integration of nanobody and ZnO nanorods for sensitive detection of nucleoside diphosphatase kinase-A10.1016/j.aca.2017.03.048 ↗
5. Impact of low temperature annealing on structural, optical, electrical and morphological properties of ZnO thin films grown by RF sputtering for photovoltaic applications10.1016/j.optmat.2015.08.021 ↗
6. The effect of Ga-doped nanocrystalline ZnO electrode on deep-ultraviolet enhanced GaN photodetector10.1063/1.4808381 ↗
7. A comprehensive review of ZnO materials and devices10.1063/1.1992666 ↗
8. Zinc vacancy and oxygen interstitial in ZnO revealed by sequential annealing and electron irradiation10.1103/PhysRevB.86.121203 ↗
9. Defects in ZnO10.1063/1.3216464 ↗
10. Native point defects in ZnO10.1103/PhysRevB.76.165202 ↗
11. Optical detection of electron paramagnetic resonance for intrinsic defects produced in ZnO by 2.5-MeV electron irradiation in situ at 4.2 K
12. Energetics of intrinsic defects and their complexes in ZnO investigated by density functional calculations10.1103/PhysRevB.83.045206 ↗
13. Recent progress of the native defects and p-type doping of zinc oxide10.1088/1674-1056/26/4/047702 ↗
14. Diffusion of zinc vacancies and interstitials in zinc oxide10.1063/1.2206559 ↗
15. Evolution kinetics of elementary point defects in ZnO implanted with low fluences of helium at cryogenic temperature10.1103/PhysRevB.94.205204 ↗
16. Tunable zinc interstitial related defects in ZnMgO and ZnCdO films
17. Role of zinc interstitial defects in indium and magnesium codoped ZnO transparent conducting films10.1016/j.apsusc.2019.06.245 ↗
18. Annealing in tellurium-nitrogen co-doped ZnO films: The roles of intrinsic zinc defects10.1063/1.4916785 ↗
19. Katsuyoshi Washio, Investigation on a source of dominant donor in vanadium-doped ZnO films grown by reactive RF magnetron sputtering10.1016/j.mssp.2016.10.052 ↗
20. Structural, optical, and electrical characterization of ZnO and Al-doped ZnO thin films deposited by MOCVD10.1002/cvde.200906790 ↗
21. Intrinsicn-type versusp-type doping asymmetry and the defect physics of ZnO
22. Investigation on the formation mechanism of In–N codoped p-Type ZnCdO thin films: experiment and theory10.1021/jp507724y ↗
23. Vacancy clustering and acceptor activation in nitrogen-implanted ZnO10.1103/PhysRevB.77.045204 ↗
24. Investigation on the formation mechanism of p-type ZnO:In-N thin films: experiment and theory10.1007/s10854-019-00906-z ↗
25. Influence of strain/stress on the nonlinear-optical properties of sprayed deposited ZnO: Al thin films10.1016/j.apsusc.2011.04.072 ↗
26. Optical properties of Zn-terminated ZnO bulk10.1016/j.jcrysgro.2003.09.044 ↗
27. Pulsed laser deposition of ZnO as conductive buffer layer of (001)-LiNbO3 thin films10.1080/00150199908014535 ↗
28. Raman study of N+-implanted ZnO
29. Interstitial zinc clusters in zinc oxide10.1103/PhysRevB.88.245201 ↗
30. Thermal evolution of zinc interstitial related donors in high-quality NH3-doped ZnO films10.1364/OME.7.000593 ↗
31. Effect of NaZn/Nai ratio on structural, optical, and electrical properties of Na-doped ZnO thin films10.1063/1.4980172 ↗
32. Influence of Dy dopant on structural and photoluminescence of Dy-doped ZnO nanoparticles10.1016/j.jallcom.2014.10.067 ↗
33. Influence of Cd doping on structural and optical properties of (Cd, Al)-codoped ZnO powders synthesized via sol–gel method10.1016/j.jallcom.2015.05.084 ↗
34. Mechanisms behind green photoluminescence in ZnO phosphor powders10.1063/1.362349 ↗
35. The kinetics of the radiative and nonradiative processes in nanocrystalline ZnO particles upon photoexcitation10.1021/jp993327z ↗
36. Surface oxygen vacancy defect-promoted electron-hole separation for porous defective ZnO hexagonal plates and enhanced solar-driven photocatalytic performance10.1016/j.cej.2019.122295 ↗
37. Oxygen vacancies promoted interfacial charge carrier transfer of CdS/ZnO heterostructure for photocatalytic hydrogen generation10.1016/j.jcis.2017.05.006 ↗
38. Synthesis and oxygen vacancy related NO2 gas sensing properties of ZnO: Co nanorods arrays gown by a hydrothermal method10.1016/j.apsusc.2015.07.072 ↗
39. Influence of annealing on the structural and optical properties of ZnO films grown by MOCVD10.1016/j.jallcom.2011.03.036 ↗
40. The role of adsorbates in the green emission and conductivity of zinc oxide10.1038/s42004-019-0153-0 ↗
41. Origin of the red emission in zinc oxide nanophosphors10.1016/j.matlet.2013.03.073 ↗
42. Trapped oxygen in the grain boundaries of ZnO polycrystalline thin films prepared by plasma-enhanced chemical vapor deposition10.1016/S0167-577X(99)00124-X ↗
43. The mechanism of formation of interface barriers in ZnO: Mn ceramics10.1007/s42452-020-2754-8 ↗
44. Substitutional diatomic molecules NO, NC, CO, N2, and O2: Their vibrational frequencies and effects on p doping of ZnO10.1063/1.1931823 ↗
45. XPS study of nitrogen-implanted ZnO thin films obtained by DC-Magnetron reactive plasma10.1016/j.elspec.2007.11.003 ↗