Investigation of preparation and characterization of GaN films on sapphire (0001) substrates
Source abstract
Abstract
Gallium nitride (GaN) films were prepared on sapphire (0001) substrates by post-nitridation technique. XRD, XPS, and TEM measurement results indicate that the polycrystalline GaN with hexagonal wurtzite structure was successfully grown. Intense room-temperature photoluminescence peaked at 466 nm of the films is observed.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (22)
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