Influence of oxide thickness on ion-beam induced and thermal CoSi2 formation
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OpenAlex topics: Semiconductor materials and interfaces · Ion-surface interactions and analysis · Silicon and Solar Cell Technologies
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References (7)
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1. Pretorius · Solid State Electron · 1978 · 21 · 66710.1016/0038-1101(78)90335-0 ↗
2. Beyers · Mater. Res. Soc. Symp. Proc. · 1985 · 47 · 14310.1557/PROC-47-143 ↗
3. Biersack · Nucl. Instr. Meth. B · 1991 · 59/60 · 2110.1016/0168-583X(91)95167-C ↗
4. Okabayashi · Nucl. Instr. Meth. B · 1989 · 39 · 24610.1016/0168-583X(89)90781-7 ↗
5. Kasko · Mater. Res. Soc. Symp. Proc. · 1992 · 268 · 28910.1557/PROC-268-289 ↗
6. Dehm · Mater. Res. Soc. Symp. Proc. · 1992 · 260 · 91710.1557/PROC-260-917 ↗
7. Eer Nisse · Appl. Phys. Lett. · 1977 · 30 · 29010.1063/1.89372 ↗