Stress, strain and elastic energy at nanometric Ge dots on Si(0 0 1)

Abstract We perform molecular dynamics simulations to obtain the stress and strain distributions for Ge pyramids with {1 0 5} facets on Si(0 0 1). We show that the strain induced in the substrate is large and increasing with the pyramid size: up to 0.7% for the 22 nm in base, and corresponds to substrate bending below the pyramid.