journal article·1990-01

Characteristic properties of III–VA/III-VB heterointerfaces grown by molecular beam epitaxy

M. Yano, M. Ashida, Y. Iwai, M. Inoue

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor Quantum Structures and Devices · Advanced Semiconductor Detectors and Materials · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Tanaka · Japan. J. Appl. Phys. · 1986 · 25 · L15510.1143/JJAP.25.L155 ↗
2. Stömer · Appl. Phys. Letters · 1981 · 38 · 69110.1063/1.92481 ↗
3. Petroff · J. Vacuum Sci. Technol. B · 1987 · 5 · 120410.1116/1.583712 ↗
4. Esaki · Japan. J. Appl. Phys. · 1981 · 20 · L52910.1143/JJAP.20.L529 ↗
5. Bastard · Phys. Rev. B · 1981 · 24 · 569310.1103/PhysRevB.24.5693 ↗
6. Cebulla · Phys. Scripta · 1987 · 35 · 51710.1088/0031-8949/35/4/019 ↗
7. Villaflor · Japan. J. Appl. Phys. · 1988 · 27 · 158010.1143/JJAP.27.1580 ↗
8. Yano · J. Vacuum Sci. Technol. B · 1989 · 7 · 19910.1116/1.584716 ↗
9. Yano · Appl. Surface Sci. · 1989 · 40 · 11510.1016/0169-4332(89)90165-7 ↗
10. Sirota · 1968 · Vol. 4 · 35