journal article·1987-10

Electrical switching and noise spectrum of Si-SiO2 interface defects generated by hot electrons

M. Bollu, F. Koch, A. Madenach, J. Scholz

Applied Surface Science· Volume 30· Issue 1-4
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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advancements in Semiconductor Devices and Circuit Design

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References (6)

Show source-provided references
1. Kirton · Appl. Phys. Letters · 1986 · 48 · 127010.1063/1.97000 ↗
2. Uren · Appl. Phys. Letters · 1985 · 47 · 119510.1063/1.96325 ↗
3. Ralls · Phys. Rev. Letters · 1984 · 52 · 22810.1103/PhysRevLett.52.228 ↗
4. Bollu · 1987 · 1519
5. Asenov · Appl. Surface Sci. · 1987 · 30 · 31910.1016/0169-4332(87)90108-5 ↗
6. Stegherr · Solid-State Electron. · 1984 · 27 · 105510.1016/0038-1101(84)90043-1 ↗