InGaAs/Si3N4 interface obtained in ultrahigh vacuum multipolar plasma: In-situ control by ellipsometry and electrical characterization

journal article·1987-10

P. Boher, M. Renaud, J.M. Lopez-Villegas, J. Schneider, J.P. Chane

Applied Surface Science· Volume 30· Issue 1-4

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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Thin-Film Transistor Technologies

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1. Cheng · IEEE Electron Device Letters EDL-5 · 1984 · 16910.1109/EDL.1984.25872 ↗

2. Taillepied · Appl. Phys. Letters · 1986 · 48 · 97810.1063/1.96629 ↗

3. Hollinger · 1987

4. Theeten · Mater. Res. Symp. Proc. · 1985 · 38 · 49910.1557/PROC-38-499 ↗

5. Langlade · 1984 · 74

6. Makram-Ebeid · Appl. Phys. Letters · 1987 · 50 · 27010.1063/1.98222 ↗

7. Boher · 1987

8. P. Boher, M. Renaud, J. Barrier, Y. Hily and L.J. van IJzendoorn, J. Appl. Phys., submitted.

9. J. Lopez-Villegas, P. Boher and M. Renaud, J. Appl. Phys., submitted.

10. Limpaecher · Rev. Sci. Instr. · 1973 · 44 · 610.1063/1.1686231 ↗

11. Arnoult · 1986

12. Gourrier · J. Appl. Phys. · 1983 · 54 · 399310.1063/1.332578 ↗

13. Schultz · Surface Sci. · 1983 · 132 · 42210.1016/0039-6028(83)90551-4 ↗

14. Nicollian · Bell Syst. Tech. J. · 1967 · 46 · 105510.1002/j.1538-7305.1967.tb01727.x ↗