Nanostructuring with a high current isotope separator and ion implanter

The oblique angle Ar bombardment with a high current isotope separator and ion implanter gives rise to nanoscale (400-900 nm) ripple formation on Si(1 0 0) at 80 and 100 keV for the dose of 10 18 ions/cm 2 . The most important aspect of our preliminary investigation regarding the beam influencec on ripple wavelength indicates that the meaningful data comparable to the theoretical models can be obtained with homogeneous irradiation via beam sweeping. At 60 keV, Ar bombarded GaAs surface also shows nanoparticle decorated ripples for the dose of 5×10 17 ions/cm 2 and at higher dose ripples without nanoparticles.