KrF excimer laser induced ablation–planarization of GaN surface
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Plasma Diagnostics and Applications · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. Smith · Appl. Phys. Lett. · 1997 · 71 · 363110.1063/1.120463 ↗
2. Basak · Semicond. Sci. Technol. · 1997 · 12 · 165410.1088/0268-1242/12/12/019 ↗
3. Fedison · J. Electrochem. Soc. · 1997 · 144 · L22110.1149/1.1837863 ↗
4. Minsky · Appl. Phys. Lett. · 1996 · 68 · 153110.1063/1.115689 ↗
5. Youtsey · J. Eletron. Mater. · 1998 · 27 · 28210.1007/s11664-998-0400-0 ↗
6. Yoshida · J. Cryst. Growth · 1997 · 181 · 29310.1016/S0022-0248(97)00366-7 ↗
7. Youtsey · Mater. Res. Soc. Symp. Proc. · 1997 · 468 · 34910.1557/PROC-468-349 ↗
8. Leonard · Appl. Phys. Lett. · 1996 · 68 · 79410.1063/1.116535 ↗
9. Zhang · Appl. Surf. Sci. · 1998 · 127–129 · 79310.1016/S0169-4332(97)00744-7 ↗
10. Chen · Mater. Res. Soc. Symp. Proc. · 1998 · 482 · 101510.1557/PROC-482-1015 ↗
11. Van Hove · J. Cryst. Growth · 1995 · 150 · 90810.1016/0022-0248(95)80071-J ↗