Development of compact cluster ion sources using metal cluster complexes
Source abstract
Abstract
In order to develop a new compact cluster ion source as a low damage sputtering source for SIMS to analyze ultra-shallow dopant state we have studied the possibility of using a metal cluster complex as an ion beam source. Metal cluster complexes such as Os3(CO)12 and Ir4(CO)12 have been studied from the view point of their stability in high vacuum and how to ionize them by using the electron ionization QMS and the XeCl laser ionization TOF. In the case of electron ionization QMS, peaks of Os3(CO)n+ (n=0–12) and Ir4(CO)n+ (n=0–12) were observed without the fragment ions such as a monomer, a dimer, etc. In the case of laser ionization TOF, peaks of the fragment and the parent ions without a carbonyl ligand were observed from Os3(CO)12, and Ir4(CO)12. The temperature dependence of fragmentation has also been discussed.
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Research context
OpenAlex topics: Ion-surface interactions and analysis · Advanced Materials Characterization Techniques · Copper Interconnects and Reliability
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References (1)
Show source-provided references
1. International Technology Roadmap for Semiconductors, 2001 ed., Semiconductor Industry Association, 2001.