Two-dimensional GdI2/GeC van der Waals heterostructure: Bipolar magnetic semiconductor, high critical temperature and large magnetic anisotropy
Source abstract
Abstract
The band alignment, intrinsic ferromagnetism, Dzyaloshinskii-Moriya interaction, magnetic anisotropy and critical temperature ( T C) of a GdI 2 /GeC van der Waals (vdW) heterostructure were systematically investigated by first-principles calculations and Monte Carlo simulations. The proposed GdI 2 /GeC vdW heterostructure is a bipolar magnetic semiconductor with Type-I band alignment, large in-plane magnetic anisotropy energy (MAE) of − 0.912 mJ/m 2 and high critical temperature of 466 K. In addition, under biaxial strains, the heterostructure transformed from semiconductor into metal, while the easy magnetization axis maintained in-plane and T C increased. The results indicated that the GdI 2/GeC vdW heterostructure presented large MAE and high T C , having potential applications in spintronic devices.
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Research context
OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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