Magnetron sputtering growth and growth mechanism of GeSn films with Sn content exceeding 25% on InP substrates
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Photonic and Optical Devices · Semiconductor Lasers and Optical Devices · Advanced Photonic Communication Systems
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. Silicon-based Silicon–Germanium–Tin heterostructure photonics10.1098/rsta.2013.0113 ↗
2. Electro-absorption m-odulation in GeSn alloys for wide-spectrum mid-infrared applications10.1038/s43246-021-00144-z ↗
3. Integration of an InSb photodete-ctor on Si via heteroepitaxy for the mid-infrared wavelength region10.1364/OE.26.007227 ↗
4. F. Li, J. Deng, J. Zhou, Z. Chu, Y. Yu, X. Dai, H. Guo, L. Chen, S. Guo, M. Lan,X. Chen, HgCdTe mid-infrared photo response enhanced by monolithically integrated meta-lenses, Sci.Rep. 10 (2020) 020-62433 02062433 Doi: 10.1038/s41598-020-62433-w.10.1038/s41598-020-62433-w ↗
5. High performance visible-swir flexible photodetector based on large-area InGaAs/InP pin structure
6. High-speed 2d and 3d mid-ir imaging with an InGaAs camera10.1063/5.0061661 ↗
7. Transfer-printing-enabled GeSn flexible resonant-cavity-enhanced photodetectors with strain-amplified mid-infrared optical responses10.1039/D2NR07107J ↗
8. Optical critical points of thin-film Ge1−ySny alloys: A comparative Ge1−ySny∕Ge1−xsnx study
9. Impact of temperature and doping on the performance of Ge/Ge1−xSnx/Ge heterojunction phototransistors10.1109/JPHOT.2020.2996808 ↗
10. Cmos-compatible self-powered short-wave infrared imagers based on GeSn photodetectorarrays10.1021/acsphotonics.4c00374 ↗
11. Gesn lateral p-i-n waveguide photodetectors for mid-infrared integrated photonics10.1364/OL.414580 ↗
12. High hole mobility of polycrystalline GeSn layers grown by hot‐wire chemical vapor deposition on diamond substrates
13. Germanium based field-effect transistors: Challenges and opportunities10.3390/ma7032301 ↗
14. Design and optimization of GeSn waveguide photodetectors for 2-microm band silicon photonics10.3390/s22113978 ↗
15. High-speed photo detection at two-micron-wavelength: Technology enablement by GeSn/Ge mu-ltiple-quantum-well photodiode on 300 mm Si substrate10.1364/OE.27.005798 ↗
16. Direct bandgap group IV epitaxy on Si forlaser applications10.1021/acs.chemmater.5b01327 ↗
17. Growth of crystalline Ge1-xSnx films on Si (100) by magnetron sputtering10.1149/2.0081409ssl ↗
18. Colloidal synthesis, physical properties, and applications of ze-ro- and one-dimensional GeSn nanostructures
19. Epitaxial growth of strained and unstrained GeSn alloys up to 25% Sn10.1016/j.tsf.2013.10.064 ↗
20. Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 ＜ y ＜ 0.30): Synthesis, structural, and opticalproperties10.1063/1.5100275 ↗
21. Review of Si-based GeSn cvd growth and optoelectronic applications10.3390/nano11102556 ↗
22. Extended compositional range for the synthesis of swir and lwir Ge1–ySny alloys and device structures via cvd of SnH4 and Ge3H810.1021/acsaelm.1c00424 ↗
23. Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature10.1063/1.3656246 ↗
24. GeSn p-i-n waveguide photodetector-s on silicon substrates10.1063/1.4903881 ↗
25. Formation of Ge-Sn layers on Si (001) substrates at high growth temperature and high deposition rate by sputt-er epitaxy method10.1007/s10853-015-8990-4 ↗
26. Sputtering-grown undoped GeSn/Ge multiple quantum wells on n-Ge for low-cost visible/shortwave infrared dual-band photodetection10.1016/j.apsusc.2024.159673 ↗
27. Growth of high-sn content (28%) GeSn alloy films by sputtering epitaxy10.1016/j.jcrysgro.2018.04.008 ↗
28. Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate10.1088/1674-1056/26/11/116802 ↗
29. Epitaxial GeSn obtained by high power impulse magnetron sputtering and the heterojunction with embedded GeSn nanocrystals for shortwave infrared detection10.1021/acsami.0c06212 ↗
30. High carrier lifetimes in epitaxial Germanium–Tin/Al(In)As heterostructures with variable Tin compos-itions10.1039/D2TC00830K ↗
31. Growth of Ge1−xSnx heteroepitaxial layers with very high Sn contents on InP(001) substrates10.1016/j.tsf.2011.10.153 ↗
32. Molecular-beam epitaxial growth of metastable Ge1−xSnx alloys10.1116/1.584814 ↗
33. S.K. Chuhui Tan, Junhong Lv, Yuan Huang, Dongsheng Peng, Zhuochen Duan, Yujuan Wu a, Jie Yang a, Feng Lin a, Chong Wang, Growth of single-crystalline GeSn films with high-Sn content on InP substrates by sputtering and rapid thermal annealing, Appl. Surf. Sci. 657 (2024) 159707, Doi: 10.1016/j.apsusc.2024.159707.10.1016/j.apsusc.2024.159707 ↗
34. Stability of sulfur-treated InP surface studied by photoluminescence and X-ray photoelectron spectroscopy10.1063/1.365263 ↗
35. Chemically cleaned InP(100) surfaces in aqueous HF solutions10.1016/S0921-5107(00)00430-X ↗
36. Diffusion and evolution of hydrogen in hydrogenated amorphous and microcrystalline silicon10.1016/S0927-0248(02)00438-5 ↗
37. Nucleation-step study of silicon homoepitaxy for low-temperature fabrication of Si solar cells
38. Farrow · 1995
39. Effect of growth temperature on crystallization of Ge1−xSnx films by magnetron sputtering10.3390/cryst12121810 ↗
40. Strain-mediated Sn incorporation and segregation in compositionally graded Ge1–xSnx epilayers grown by mbe at different temperatures10.1021/acs.cgd.3c00494 ↗
41. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation10.1063/1.5050273 ↗
42. Thompson · 2001
43. Thin Film Materials (Stress, Defect Formation and Surface Evoluti-on) Film stress and substrate curvature