Surface sulfurization of liner and ruthenium metallization to reduce interface scattering for Low-Resistance interconnect
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Copper Interconnects and Reliability · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (53)
Show source-provided references
1. Electron mean free path in elemental metals10.1063/1.4942216 ↗
2. Materials quest for advanced interconnect metallization in integrated circuits10.1002/advs.202207321 ↗
3. First-Principles Evaluation of fcc Ruthenium for its use in Advanced Interconnects10.1103/PhysRevApplied.13.044045 ↗
4. Resistivity size effect in epitaxial Ru(0001) layers10.1063/1.5046430 ↗
5. Resistivity and surface scattering of (0001) single crystal ruthenium thin films10.1116/1.5093494 ↗
6. Grain-boundary/interface structures and scatterings of ruthenium and molybdenum metallization for low-resistance interconnects10.1016/j.apsusc.2023.157440 ↗
7. Size effect of resistivity due to surface roughness scattering in alternative interconnect metalsCu Co, Ru, and Mo10.1103/PhysRevB.107.195422 ↗
8. Alteration of Cu conductivity in the size effect regime
9. Electron channeling in TiO2coated Cu layers10.1088/0268-1242/31/5/055005 ↗
10. The search for the most conductive metal for narrow interconnect lines10.1063/1.5133671 ↗
11. MoS(2) for Enhanced Electrical Performance of Ultrathin Copper Films10.1021/acsami.9b03381 ↗
12. Studies of two-dimensional h-BN and MoS2 for potential diffusion barrier application in copper interconnect technology, npj 2D
13. Density-of-States Limited Contact Resistance in Graphene Field-Effect Transistors10.1143/JJAP.50.070108 ↗
14. Nanometer-thick copper films with low resistivity grown on 2D material surfaces
15. Single layer MoS2 on the Cu(111) surface: First-principles electronic structure calculations10.1103/PhysRevB.85.075429 ↗
16. Enhancing interconnect reliability and performance by converting tantalum to 2D layered tantalum sulfide at low temperature10.1002/adma.201902397 ↗
17. Transistors based on two-dimensional materials for future integrated circuits10.1038/s41928-021-00670-1 ↗
18. Patterned growth of P-type MoS2 atomic layers using sol–gel as precursor10.1002/adfm.201602494 ↗
19. Low-temperature synthesis of large-scale molybdenum disulfide thin films directly on a plastic substrate using plasma-enhanced chemical vapor deposition10.1002/adma.201501678 ↗
20. Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si(001) wafers and Cu overlayers10.1038/s41598-018-23782-9 ↗
21. Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells10.1016/j.solener.2017.05.015 ↗
22. Combined macro/nanoscale investigation of the chemical vapor deposition of Fe from Fe (CO) 510.1002/admi.201601185 ↗
23. A Review on Chemical Vapour Deposition of Two-Dimensional MoS(2) Flakes10.3390/ma14247590 ↗
24. Y.-H. Kim, Y. Kotsugi, T. Cheon, R. Ramesh, S.-H. Kim, Atomic layer deposition of RuO 2 using a new metalorganic precursor as a diffusion barrier for Ru interconnect, in: 2021 IEEE International Interconnect Technology Conference (IITC), IEEE, 2021, pp. 1–3.10.1109/IITC51362.2021.9537498 ↗
25. J. Dean, Properties of atoms, radicals, and bonds, Lange’s handbook of chemistry, 15 (1999) 4.36–34.37.
26. A. Jain, S.P. Ong, G. Hautier, W. Chen, W.D. Richards, S. Dacek, S. Cholia, D. Gunter, D. Skinner, G. Ceder, K.A. Persson, Commentary: The Materials Project: A materials genome approach to accelerating materials innovation, APL Materials, 1 (2013) 011002 (pp. 1-11).10.1063/1.4812323 ↗
27. Core electron binding energies in some Group IIIA, VB, and VIB compounds10.1021/ic50128a045 ↗
28. Promoting subordinate, efficient ruthenium sites with interstitial silicon for Pt-like electrocatalytic activity10.1002/ange.201906394 ↗
29. Polynuclear carbonyl complexes of ruthenium and osmium with methylthiolate and bromide bridging ligands10.1246/cl.1980.1537 ↗
30. XPS investigation of monatomic and cluster argon ion sputtering of tantalum pentoxide10.1016/j.apsusc.2017.02.006 ↗
31. Synthesis of large-scale few-layer PtS2 films by chemical vapor deposition
32. A novel design and synthesis of ruthenium sulfide decorated activated graphite nanocomposite for the electrochemical determination of antipsychotic drug chlorpromazine10.1016/j.compositesb.2018.12.082 ↗
33. Nano-sized Pt–NbO x supported on TiN as cost-effective electrocatalyst for oxygen reduction reaction, Materials for Renewable and Sustainable
34. Effect of encapsulation on electronic transport properties of nanoscale Cu(111) films10.1038/s41598-019-40193-6 ↗
35. Non-specular scattering of carriers from surface defects in thin metal interconnects10.1063/5.0026771 ↗
36. K. Fuchs, The conductivity of thin metallic films according to the electron theory of metals, in: Mathematical Proceedings of the Cambridge Philosophical Society, Cambridge University Press, 34 (1938) 100–108.10.1017/S0305004100019952 ↗
37. The mean free path of electrons in metals10.1080/00018730110102187 ↗
38. Electrical resistivity model for polycrystalline films: the case of specular reflection at external surfaces10.1063/1.1652680 ↗
39. Electrical-resistivity model for polycrystalline films: the case of arbitrary reflection at external surfaces10.1103/PhysRevB.1.1382 ↗
40. Influence of phonon, geometry, impurity, and grain size on Copper line resistivity10.1063/1.2355435 ↗
41. Electrical transport properties of ultrathin metallic films10.1116/1.1935527 ↗
42. Conduction in ultrathin ruthenium electrodes prepared by atomic layer deposition10.1016/j.matlet.2011.12.117 ↗
43. Low-resistivity ruthenium metal thin films grown via atomic layer deposition using dicarbonyl-bis (5-methyl-2, 4-hexanediketonato) ruthenium (II) and oxygen10.1016/j.mssp.2022.107258 ↗
44. Resistivity of thin Cu films coated with Ta, Ti, Ru, Al, and Pd barrier layers from first principles10.1103/PhysRevB.81.045406 ↗
45. Adsorption of NO2 and NH3 on single-atom (Co, Pd, Pt)-decorated 2H-MoS2 monolayer: A DFT study10.1016/j.rinp.2023.106694 ↗
46. Density functional theory study on the metal–support interaction between Ru cluster and anatase TiO2 (101) surface10.1021/jp409627p ↗
47. Electron scattering at interfaces: A tight-binding approach10.1103/PhysRevB.52.6640 ↗
48. First-principles prediction of electron grain boundary scattering in fcc metals10.1063/5.0098822 ↗
49. Atomic-scale observation on the nucleation and growth of displacement-activated palladium catalysts and electroless copper plating10.1149/1.1938668 ↗
50. Electron transport across Cu/Ta(O)/Ru(O)/Cu interfaces in advanced vertical interconnects10.1016/j.commatsci.2018.11.040 ↗
51. Electron scattering at interfaces in nano-scale vertical interconnects: A combined experimental and ab initio study10.1063/1.5027096 ↗
52. Transmission line method (TLM) measurement of (metal/ZnS) contact resistance
53. RuS2 and RuSe2 single crystals: a study of phonons, optical absorption and electronic properties10.1088/0022-3719/18/32/018 ↗