Observation of short-wavelength recorded marks in TeOx thin film by atomic force microscopy

Abstract Single-layer TeO x thin films were deposited on K9 glass substrates by vacuum evaporation. The TeO x thin film was successfully recorded with a short-wavelength laser beam (514.5 nm). Atomic force microscopy (AFM) is first used to study the microstructure of recorded marks. Microarea morphology images show that the marks are deformed, and depressions and bulges have been imaged in the recorded marks. The level of the deformation is enhanced with the increase of writing power. AFM allows a precise determination of the mark size, the depression depth and the bulge height. The present setup allows the identification of individual marks through a specific location method and the correlation of the reflectivity contrast, C , caused by a specific writing power to the morphology of the marks. AFM is a useful tool to the study of the mechanism of writing process and the improvement of recording performances of TeO x optical storage media.