Determination of Si-SiO2 interface trap properties of p-MOS structures with very thin oxides by conductance measurement
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OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Advancements in Semiconductor Devices and Circuit Design
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References (5)
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1. Nicollian · Bell Syst. Tech. J. · 1967 · 46 · 105510.1002/j.1538-7305.1967.tb01727.x ↗
2. Goetzberger · CRC Crit. Rev. Solid State Sci. · 1976 · 6 · 110.1080/10408437608243548 ↗
3. Schulz · 1979 · 50 · 87
4. Nicollian · 1982
5. Brews · J. Appl. Phys. · 1972 · 43 · 230610.1063/1.1661496 ↗