Field effect of fixed negative charges on oxidized silicon induced by AlF3 layers with fluorine deficiency

Abstract We recently discovered that in an AlF 3 /SiO 2 /Si structure extrinsic electrons are trapped at fluorine (F) vacancies in AlF 3 at the interface with SiO 2 , generating a high sheet density of fixed negative charges. p- and n-Type Si substrates were oxidized using rapid thermal oxidation (RTO) or furnace oxidation (th); some samples were passivated in hydrogen (H 2 ). AlF 3 was deposited onto oxidized Si wafers by a modified PVD process, leading to a F deficiency (AlF x ). Samples were characterized by mercury probe (Hg) CV and microwave photo conduction decay (μW-PCD), determining charge and trap densities and effective carrier lifetime τ eff , respectively. An effective charge density of up to | Q eff = −6.9 × 10 12 cm −2 is reached due to electrons tunneling from Si into AlF 3 , occupying F vacancies. Lifetime scans of p-type float zone (FZ) Si samples with 1.5 nm RTO and 20 nm AlF 3 show an increase in effective minority carrier lifetime by a factor of 8.4 compared to samples with 1.5 nm RTO only. The fixed negative charge density increases with exposure time to sunlight or at simulated ageing by a 24 h anneal at 200 °C in air.