The influence of elastic stresses during growth of (Al)GaAs/InGaAs/(Al)GaAs quantum well heterostructures on indium distribution
Source abstract
Abstract
The experimental and calculation data on indium distribution in (Al)GaAs/InGaAs/(Al)GaAs quantum well (QW) structures are presented. Experimental examination revealed increase of In concentration in the growth direction in single QW and relative shift of composition in close-spaced multiple QWs. The results of calculation based on consideration of elastic strain energy contribution to the free energy of mixing are in good agreement with experimental data and testify that the elastic stresses give essential contribution in the observed effect.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Advanced Semiconductor Detectors and Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (10)
Show source-provided references
1. Lutgen · J. Cryst. Growth · 1995 · 152 · 110.1016/0022-0248(95)00060-7 ↗
2. Bugge · J. Cryst. Growth · 1998 · 183 · 51110.1016/S0022-0248(97)00503-4 ↗
3. G.B. Stringfellow, Organometallic Vapor Phase Epitaxy: Theory and Practice, 2nd Edition, Academic Press, San Diego, 1999, 572 pp.
4. Nahory · J. Electrochem. Soc. · 1978 · 125 · 105310.1149/1.2131620 ↗
5. V.V. Kuznetsov, P.P. Moskvin, V.S. Sorokin, Nonequilibrium Phenomena at Liquid Phase Heteroepitaxy of Semiconductor Solid Solutions, Metallurgia, Moscow, 1991, 175 pp.
6. Nakajima · J. Cryst. Growth · 1993 · 126 · 51110.1016/0022-0248(93)90800-C ↗
7. Seki · J. Cryst. Growth · 1986 · 74 · 17210.1016/0022-0248(86)90261-7 ↗
8. Crawford · MRS Internet J. Nitride Semicond. Res. · 1996 · 1 · 1210.1557/S1092578300001848 ↗
9. S.S. Strelchenko, V.V. Lebedev, Handbook of AIIIBV Compounds, Metallurgia, Moscow, 1984, 144 pp.
10. Kim · J. Cryst. Growth · 2000 · 221 · 36810.1016/S0022-0248(00)00715-6 ↗