Electron-difraction investigation of HgCdTe laser deposited films
Source abstract
Abstract
Abstract The investigation of pulsed laser deposited (PLD) HgCdTe films structures by means of electron diffraction and transmission electron microscopy (TEM) techniques was carried out. The deposition was made on GaAs, KCl, CdTe and sapphire substrates with YAG:Nd3+ (1.06 μm) and XeCl (0.308 μm) lasers. The substrate temperature was in the range 30°C–250°C. Both amorphous and polycrystalline films with different crystallite sizes were manufactured on substrates of different quality. The crystallite size versus film production conditions was evaluated from TEM studies.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Semiconductor Quantum Structures and Devices · Chalcogenide Semiconductor Thin Films
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References (23)
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