journal article·1998-01

A TEM study of substrate pitting during the MBE growth of GaN on GaAs and GaP substrates

D.M. Tricker, P.D. Brown, T.S. Cheng, C.T. Foxon, C.J. Humphreys

Applied Surface Science· Volume 123-124
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Abstract

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Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor Quantum Structures and Devices · Nanowire Synthesis and Applications

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References (3)

Show source-provided references
1. Cheng · Appl. Phys. Lett. · 1995 · 66 · 150910.1063/1.113671 ↗
2. Newcomb · J. Microsc. · 1985 · 140 · 19510.1111/j.1365-2818.1985.tb02675.x ↗
3. Xin · J. Cryst. Growth · 1997 · 171 · 32110.1016/S0022-0248(96)00663-X ↗