Electrical characteristics of silver/silicon contacts
Source abstract
Abstract
We have measured current-voltage (IV) characteristics of Si(111)7×7-Ag, Si(111)(√3 × √3)R30°-Ag and Si(100)2 × 1-Ag interfaces, grown in ultrahigh vacuum (UHV). Our data strongly suggest that their Schottky barrier heights (SBHs) are spatially non-uniform. This non-uniformity may be attributed to structural and morphological inhomogeneity at the interface. This demonstrates the importance of interface structure and growth kinetics for determining macroscopic properties such as SBH.
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Research context
OpenAlex topics: Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis · Surface and Thin Film Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (14)
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