journal article·1997-06

AlN epitaxial growth on atomically flat initially nitrided α-Al2O3 wafer

Takumi Suetsugu, Tsuyoshi Yamazaki, Shuichi Tomabechi, Kazuhiko Wada, Kazuya Masu, Kazuo Tsubouchi

Applied Surface Science· Volume 117-118
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Acoustic Wave Resonator Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (9)

Show source-provided references
1. Tsubouchi · IEEE Trans. Son. Ultrason. · 1985 · SU-32 · 63410.1109/T-SU.1985.31647 ↗
2. Nakase · 1994 · 374
3. Kawakami · Jpn. J. App. Phys. · 1988 · 27 · L16110.1143/JJAP.27.L161 ↗
4. Masu · Jpn. J. Appl. Phys. · 1995 · 34 · L76010.1143/JJAP.34.L760 ↗
5. Uchida · 1996 · 48
6. Uchida · J. Appl. Phys. · 1996 · 79 · 348710.1063/1.361398 ↗
7. Uchida · J. Appl. Phys. · 1996 · 80 · 194210.1063/1.363832 ↗
8. Yoshimoto · Appl. Phys. Lett. · 1995 · 67 · L261510.1063/1.114313 ↗
9. Cullen · 1995 · 27