In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process
Source abstract
Abstract
Metalorganic vapor-phase epitaxy of β-Ga2O3/c-plane Al2O3 heterostructures was monitored in-situ by spectral reflectance in different wavelengths. The reflectance spectrum was analysed as a function of the growth time and the incident wavelength to estimate the growth rate and the refractive index at the growth temperatures. The obtained values are validated by ex-situ methods such as secondary ion mass spectrum measurement and spectroscopic ellipsometry. A theoretical simulation of the reflectance spectrum was carried out by combining a transfer matrix method with a multilayer model, and a good agreement with the experimental results is presented.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (53)
Show source-provided references
1. Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices10.1016/j.microrel.2020.113951 ↗
2. Source-field-plated Ga2O3 MOSFET with a breakdown voltage of 550 v10.1088/1674-4926/40/1/012803 ↗
3. T.-S. Chou, P. Seyidov, S. Bin Anooz, R. Grüneberg, T. Thi Thuy Vi, K. Irmscher, M. Albrecht, Z. Galazka, J. Schwarzkopf, A. Popp, Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE process, AIP Adv. 11 (2021) 115323. 10.1063/5.0069243.10.1063/5.0069243 ↗
4. Electron channel mobility in silicon-doped Ga2O3 MOSFETs with a resistive buffer layer10.7567/JJAP.55.1202B9 ↗
5. β-Ga2O3 thin films on sapphire pre-seeded by homo-self-templated buffer layer for solar-blind UV photodetector10.1016/j.optmat.2015.11.023 ↗
6. High-quality Schottky barrier diodes on β-gallium oxide thin films on glass substrate10.1149/2.0241907jss ↗
7. Recent advances in the growth of gallium oxide thin films employing various growth techniques—a review10.1088/1361-6463/ac1af2 ↗
8. Solar blind deep ultraviolet β-Ga2O3 photodetectors grown on sapphire by the Mist-CVD method10.1364/OME.8.002941 ↗
9. Rapid response high temperature oxygen sensor based on titanium doped gallium oxide10.1038/s41598-019-54136-8 ↗
10. β-Gallium oxide as oxygen gas sensors at a high temperature10.1111/j.1551-2916.2007.01842.x ↗
11. The structure of low-index surfaces of β-Ga2O310.1016/j.chemphys.2005.08.051 ↗
12. A review of the most recent progresses of state-of-art gallium oxide power devices10.1088/1674-4926/40/1/011803 ↗
13. Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition10.1016/j.jcrysgro.2013.11.022 ↗
14. Rf-plasma-assisted molecular-beam epitaxy of β-Ga2O310.1063/1.2164407 ↗
15. Structural and optical properties of β-Ga2O3 thin films grown by plasma-assisted molecular beam epitaxy
16. Development of β-Ga2O3 layers growth on sapphire substrates employing modeling of precursors ratio in halide vapor phase epitaxy reactor10.1038/s41598-020-79154-9 ↗
17. Epitaxial growth of (2¯ 01) β-Ga2O3 on (0001) sapphire substrates by halide vapour phase epitaxy10.1016/j.mssp.2016.02.008 ↗
18. Growth and characterization of α-, β-, and ∊-phases of Ga2O3 using MOCVD and HVPE techniques10.1080/21663831.2018.1443978 ↗
19. Characterization of β-Ga2O3 thin films on sapphire (0001) using metal-organic chemical vapor deposition technique10.1016/j.vacuum.2012.04.019 ↗
20. Homo- and heteroepitaxial growth of Sn-doped β-Ga2O3 layers by MOVPE10.1039/C5CE01106J ↗
21. Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE10.1016/j.jcrysgro.2013.11.056 ↗
22. Effect of off-axis substrate angles on β-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire by MOCVD10.1016/j.mssp.2021.105856 ↗
23. Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE- grown β-Ga2O3 films for vertical device application10.1063/5.0133589 ↗
24. High-mobility 4 µm MOVPE-grown (100) β-Ga2O3 thin film by parasitic particles suppression10.35848/1347-4065/acb360 ↗
25. In situ growth regime characterization of cubic GaN using reflection high energy electron diffraction10.1063/1.2432293 ↗
26. In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction10.1063/1.2968442 ↗
27. Reflection high-energy electron diffraction oscillations from vicinal surfaces - A new approach to surface diffusion measurements10.1063/1.96281 ↗
28. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters10.1016/j.spmi.2019.05.026 ↗
29. Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures10.1016/j.physe.2012.02.002 ↗
30. Si doping in MOCVD grown (010) β-(AlxGa1-x)2O3 thin films10.1063/5.0084062 ↗
31. A.F.M. Anhar Uddin Bhuiyan, Z. Feng, J.M. Johnson, H.L. Huang, J. Hwang, H. Zhao, MOCVD Epitaxy of Ultrawide Bandgap β-(AlxGa1-x)2O3 with High-Al Composition on (100) β-Ga2O3 Substrates, Cryst. Growth Des. 20 (2020) 6722–6730. 10.1021/acs.cgd.0c00864.10.1021/acs.cgd.0c00864 ↗
32. Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application10.1063/5.0122886 ↗
33. Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) β-Ga2O3 thin films using in-situ reflectance spectroscopy10.1016/j.jcrysgro.2022.127003 ↗
34. Local-field effects and effective-medium thoery: A microscopic perspective10.1119/1.12734 ↗
35. Born · 2013
36. S.J. Byrnes, Multilayer optical calculations, Arxiv. (2016) 1–20. 10.48550/ARXIV.1603.02720.
37. Epitaxial growth of β-Ga2O3 by hot-wall MOCVD10.1063/5.0087571 ↗
38. Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate10.1016/j.jcrysgro.2012.04.006 ↗
39. Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition10.1063/1.4963820 ↗
40. Refractive Index of Synthetic Sapphire10.1364/JOSA.48.000072 ↗
41. Temperature-dependent index of refraction of monoclinic Ga2O3 single crystal10.1364/AO.50.006006 ↗
42. Thermal expansion of single-crystalline β-Ga2O3 from RT to 1200 K studied by synchrotron-based high resolution x-ray diffraction10.1063/1.5054265 ↗
43. Relation Between Surface Roughness and Specular Reflectance at Normal Incidence10.1364/JOSA.51.000123 ↗
44. Bruggeman, Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen
45. Spectroscopic ellipsometry studies on β-Ga2O3 films and single crystal10.7567/JJAP.55.1202B2 ↗
46. Optical properties of gallium oxide thin films10.1063/1.1491613 ↗
47. Optical probe of ferroelectric order in bulk and thin-film perovskite titanates10.1103/PhysRevB.88.104110 ↗
48. Temperature-dependent anisotropic refractive index in β-Ga2O3: application in interferometric thermometers10.3390/nano13061126 ↗
49. Frequency and temperature dependence of the refractive index of sapphire10.1016/S1350-4495(98)00010-3 ↗
50. Single-layer model for surface roughness10.1364/AO.41.003167 ↗
51. H. Fujiwara, Spectroscopic Ellipsometry: Principles and Applications, 6th ed., John Wiley & Sons, 2007. 10.1002/9780470060193.10.1002/9780470060193 ↗
52. Ellipsometric determination of the thickness and the refractive index of superficial films deposited on metal mirrors10.1088/1742-6596/1426/1/012027 ↗
53. Thermal expansion coefficients of β-Ga2O3 single crystals10.7567/APEX.8.111101 ↗