journal article·2024-04

The structures, electronic and photoelectronic properties of the line defects in two-dimensional Bi2O2Se

Wenhui Hu, Yaoyu He, Zhi Yang, Li-Chun Xu, Lin Xue, Ruiping Liu, Xuguang Liu

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OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Advanced Thermoelectric Materials and Devices

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References (66)

Show source-provided references
1. Electronics based on two-dimensional materials10.1038/nnano.2014.283 ↗
2. Two-dimensional layered MoS2: rational design, properties and electrochemical applications10.1039/C5EE03761A ↗
3. Fast and broadband photoresponse of few-layer black phosphorus field-effect transistors10.1021/nl5008085 ↗
4. MoS2-on-GaN plasmonic photodetector using a bowtie striped antenna structure10.1021/acsaelm.2c00958 ↗
5. A solid-liquid composite lubricating “Nano-Snowboard” for long-acting treatment of osteoarthritis10.1002/adfm.202208189 ↗
6. Sub-5 nm monolayer MoS2 transistors toward low-power nanodevices10.1021/acsaelm.0c00840 ↗
7. The role of defects and doping in 2D graphene sheets and 1D nanoribbons10.1088/0034-4885/75/6/062501 ↗
8. Structural defects in graphene10.1021/nn102598m ↗
9. Defects in graphene: generation, healing, and their effects on the properties of graphene: A review10.1016/j.jmst.2014.11.019 ↗
10. Symmetry breaking induced bandgap in epitaxial graphene layers on SiC10.1021/nl802409q ↗
11. Polycrystalline graphene and other two-dimensional materials10.1038/nnano.2014.166 ↗
12. Photoresponse in graphene induced by defect engineering10.7567/APEX.9.115101 ↗
13. Spin polarized conductance in hybrid graphene nanoribbons using 5–7 defects10.1021/nn900614x ↗
14. Valleytronics in two-dimensional materials with line defect10.1088/1361-6528/ac50f2 ↗
15. Robust valley filter induced by quantum constructive interference in graphene with line defect and strain10.1088/1402-4896/ac9e7b ↗
16. Influence of local deformation on valley transport properties in the line defect of graphene10.7498/aps.72.20230736 ↗
17. Photogalvanic effect in monolayer black phosphorus10.1088/0957-4484/26/45/455202 ↗
18. Defects in phosphorene10.1021/acs.jpcc.5b06077 ↗
19. Point defects in lines in single crystalline phosphorene: directional migration and tunable band gaps10.1039/C6NR05414E ↗
20. 2D ternary chalcogenides10.1002/adom.201800058 ↗
21. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se10.1038/nnano.2017.43 ↗
22. Emerging two-dimensional bismuth oxychalcogenides for electronics and optoelectronics10.1002/inf2.12215 ↗
23. Quasi-Two-Dimensional Se-terminated bismuth oxychalcogenide (Bi2O2Se)10.1021/acsnano.9b07000 ↗
24. The electronic and optical properties of multi-layer Bi2O2X (X = S, Se, Te) by first-principles calculations10.1016/j.apsusc.2023.156541 ↗
25. Native point defects of semiconducting layered Bi2O2Se10.1038/s41598-018-29385-8 ↗
26. Ultrathin Bi2O2S nanosheet near-infrared photodetectors10.1039/D0NR02991B ↗
27. Bismuth Oxychalcogenide Nanosheet: facile synthesis, characterization, and photodetector application10.1002/admt.202000180 ↗
28. High mobility and quantum oscillations in semiconducting Bi2O2Te nanosheets grown by chemical vapor deposition10.1021/acs.nanolett.2c02891 ↗
29. High-performance self-powered photodetector based on Bi2O2Se nanosheets10.1007/s00339-020-03759-0 ↗
30. Ultra-stable, sensitive and broadband photodetector based on large-area 2D bismuth oxyselenide film for multiband image sensing10.1016/j.cej.2023.143626 ↗
31. Physics of intrinsic point defects in bismuth oxychalcogenides: A first-principles investigation10.1063/1.5040690 ↗
32. Self-modulation doping effect in the high-mobility layered semiconductor Bi2O2Se
33. Tuning power factors of two-dimensional Bi2O2Se nanoplates through vacancy engineering
34. Defect-induced photogating effect and its modulation in ultrathin free-standing Bi2O2Se nanosheets with a visible-to-near-infrared photoresponse10.1039/D3TC01129A ↗
35. Rich oxygen vacancies mediated bismuth oxysulfide crystals towards photocatalytic CO2-to-CH4 conversion10.1007/s40843-020-1622-8 ↗
36. Simultaneous optimization of phononic and electronic transport in two-dimensional Bi2O2Se by defect engineering10.1007/s11432-023-3758-4 ↗
37. Defect engineering in thickness-controlled Bi2O2Se-based transistors by argon plasma treatment10.1021/acsami.1c24260 ↗
38. Raman tensor studies on defective non-van der Waals Bi2O2Se10.1063/5.0119183 ↗
39. Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material10.1063/1.5017217 ↗
40. Density-functional method for nonequilibrium electron transport
41. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
42. Special points for Brillouin-zone integrations10.1103/PhysRevB.13.5188 ↗
43. Controlled synthesis of high-mobility atomically thin bismuth oxyselenide crystals10.1021/acs.nanolett.7b00335 ↗
44. Sub 10 nm bilayer Bi2O2Se transistors10.1002/aelm.201800720 ↗
45. First-principles study of thermal transport properties in the two- and three-dimensional forms of Bi2O2Se10.1039/C9CP01867K ↗
46. Improved thermoelectric performance of bilayer Bi2O2Se by the band convergence approach10.1039/C9TC02188D ↗
47. DFT-1/2 and shell DFT-1/2 methods: electronic structure calculation for semiconductors at LDA complexity10.1088/1361-648X/ac829d ↗
48. Approximation to density functional theory for the calculation of band gaps of semiconductors10.1103/PhysRevB.78.125116 ↗
49. Influence of the exchange screening parameter on the performance of screened hybrid functionals10.1063/1.2404663 ↗
50. Surface electronic structure of bismuth oxychalcogenides10.1103/PhysRevB.100.115417 ↗
51. PbSe quantum dots sensitized high-mobility Bi2O2Se nanosheets for high-performance and broadband photodetection beyond 2 μm10.1021/acsnano.9b03124 ↗
52. Molecular beam epitaxy and electronic structure of atomically thin oxyselenide films10.1002/adma.201901964 ↗
53. Geometric structures and electronic properties of the Bi2X2Y (X, Y = O, S, Se, and Te) ternary compound family: A systematic DFT study10.1039/C8TC04587A ↗
54. Effects of sulfur line vacancy defects on the electronic and optical properties of armchair MoS2 nanoribbon10.1016/j.optmat.2020.110491 ↗
55. Magnetic properties of carbon doped CdS: A first-principles and Monte Carlo study10.1103/PhysRevB.77.125211 ↗
56. Constant pressure molecular dynamics algorithms10.1063/1.467468 ↗
57. Ab initio modeling of quantum transport properties of molecular electronic nanodevices10.1103/PhysRevB.63.245407 ↗
58. A highly polarization sensitive antimonene photodetector with a broadband photoresponse and strong anisotropy10.1039/C7TC05488B ↗
59. Two-dimensional bismuth oxyselenide quantum dots as nanosensors for selective metal ion detection over a wide dynamic range: sensing mechanism and selectivity10.1039/D3NR02029K ↗
60. Theoretical characterisation of point defects on a MoS2 monolayer by scanning tunnelling microscopy10.1088/0957-4484/27/10/105702 ↗
61. Role of O and Se defects in the thermoelectric properties of bismuth oxideselenide10.1063/1.4967989 ↗
62. Detailed atomic reconstruction of extended line defects in monolayer MoS210.1021/acsnano.6b01673 ↗
63. Atomically thin p-n junctions based on two-dimensional materials10.1039/C7CS00880E ↗
64. Effects of doping Ti, Nb, Ni on the photoelectric properties of monolayer 2H-WSe210.1016/j.physe.2021.114846 ↗
65. Point-defect improved photogalvanic effect in Janus WSSe monolayer
66. Effect of vacancies on photogalvanic effect in two-dimensional WSe2 photodetector10.1016/j.apsusc.2022.155401 ↗