The oxidation enhancement photocurrent response in WSe1.95Te0.05 nanosheets
Source abstract
Abstract
The photocurrent was detected in the WSe1.95Te0.05 with and without surface oxidation. The linear current–voltage relation reveal the WSe1.95Te0.05 nanosheet/Pt ohmic contact. The XPS spectrum reveals the WO3 was formed during the oxidation. The photo responsivity increase from 173 A/W to 442 A/W at 0.5 V after air exposuring in ambient conditions over half year. This value is the highest observed values in two-dimensional transition metal dichalcogenides without artificial treatments. The greatly photocurrent enhancement originated from the incident photo-to-current efficiency (IPCE) enhancement of WO3 at the wavelength of 405 nm.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (47)
Show source-provided references
1. High-Performance 2D MoS2 Phototransistor for Photo Logic Gate and Image Sensor10.1021/acsphotonics.8b01049 ↗
2. Ultrafast graphene photodetector10.1038/nnano.2009.292 ↗
3. Graphene photodetectors with ultra-broadband and high responsivity at room temperature10.1038/nnano.2014.31 ↗
4. Highly responsive photoconductance in a Sb2SeTe2 topological insulator nanosheet at room temperature10.1039/C7RA06151J ↗
5. The Highly Uniform Photoresponsivity from Visible to Near IR Light in Sb2Te3 Flakes10.3390/s21041535 ↗
6. Near infrared photodetectors based on MoTe2/graphene heterostructure with high responsivity and exibility10.1002/smll.201700268 ↗
7. Pulsed cathodoluminescence and Raman spectra of MoS2 and WS2 nanocrystals and their combination MoS2/WS2 produced by self-propagating high-temperature synthesis
8. Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures10.1038/nnano.2014.167 ↗
9. Electrical contacts to two-dimensional semiconductors10.1038/nmat4452 ↗
10. Contacts between Two and Three Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions10.1021/acsnano.6b01842 ↗
11. Does p-type ohmic contact exist in WSe2 metal interfaces10.1039/C5NR06204G ↗
12. Ohmic contacts between monolayer WSe2 and two-dimensional titanium carbides10.1016/j.carbon.2018.04.043 ↗
13. Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer10.1063/1.5030525 ↗
14. Atmospheric and Long-term Aging Effects on the Electrical Properties of Variable Thickness WSe2 Transistors10.1021/acsami.8b12545 ↗
15. High performance transition metal dichalcogenide photodetectors enhanced by self-assembled monolayer doping10.1002/adfm.201501170 ↗
16. Excellent photoresponse performances of graphene/metallic WSe2 nanosheet heterostructure films10.1016/j.mssp.2019.104851 ↗
17. High performance WO3-XWSe2/SiO2 /n-Si heterojunction near-infrared photodetector via a homo-doping strategy10.1039/C8TC01497C ↗
18. Wafer-scale growth of WSe2 monolayers toward phase-engineered hybrid WOx/WSe2 Films with sub-ppb NOx gas sensing by a low-temperature plasma-assisted selenization process10.1021/acs.chemmater.6b04467 ↗
19. Paper-based exible photodetector functionalized by WSe2 nanodots10.1021/acsanm.9b00266 ↗
20. Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices10.1088/0957-4484/27/22/225501 ↗
21. Direct patterning of p-type-doped few layer WSe2 nanoelectronic devices by oxidation scanning probe lithography10.1021/acsami.8b15937 ↗
22. Giant persistent photoconductivity in monolayer MoS2 field-effect transistors.10.1038/s41699-020-00182-0 ↗
23. Highly enhanced photoresponsivity of a monolayer WSe2 photodetector with nitrogen-doped graphene quantum dots10.1021/acsami.7b18419 ↗
24. S.T., MoS2/Si Heterojunction with Vertically Standing Layered Structure for Ultrafast, High-Detectivity, Self-Driven Visible-Near Infrared Photodetectors10.1002/adfm.201500216 ↗
25. P.D., Atmospheric and long-term aging effects on the electrical properties of variable thickness WSe2 transistors10.1021/acsami.8b12545 ↗
26. Thermal oxidation of WSe2 nanosheets adhered on SiO2/Si substrates10.1021/acs.nanolett.5b02069 ↗
27. Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors10.1021/nn300889c ↗
28. Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates10.1021/nl400107k ↗
29. Single-Layer MoS2 Phototransistors10.1021/nn2024557 ↗
30. Mechanisms of Photoconductivity in Atomically Thin MoS210.1021/nl502339q ↗
31. Few-Layer MoS2 with high broadband photo gain and fast optical switching for use in harsh environments10.1021/nn305301b ↗
32. High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared10.1002/adma.201201909 ↗
33. Photoconductivities in MoS2 Nano flake Photoconductors10.1186/s11671-016-1331-y ↗
34. Ultrasensitive all 2D MoS2 photo-transistors enabled by an out-of-plane MoS2 PN homojunction10.1038/s41467-017-00722-1 ↗
35. Stable, highly-respinsive and broadband photodetection based on larger-area multilayered WS2 films grown by pulsed-laser deposition10.1039/C5NR03361F ↗
36. High-responsivity UV-Vis Photodetector Based on Transferable WS2 Film Deposited by Magnetron Sputtering10.1038/srep20343 ↗
37. Direct WS2 photodetector fabrication on a flexible substrate10.1016/j.vacuum.2020.109950 ↗
38. Doping with Nb enhances the photoresponsivity of WSe2 thin sheets10.1063/1.5024570 ↗
39. High optical response of niobium-doped WSe2-layered crystals10.3390/ma12071161 ↗
40. High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe2 Transistors10.1021/acsami.5b02264 ↗
41. Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices10.1088/0957-4484/27/22/225501 ↗
42. Promoting the performance of layered material photodetectors by alloy engineering10.1021/acsami.6b03691 ↗
43. Extraordinary photoresponse in two-dimensional In2Se3 nanosheets10.1021/nn405037s ↗
44. A high performance graphene/few layer InSe photo-detector10.1039/C5NR00400D ↗
45. High Performance and Bendable Few-Layered InSe Photodetectors with Broad Spectral Response10.1021/nl500817g ↗
46. Electronic transport in NbSe2 two dimensional nanostructures: semiconducting characteristics and photoconductivity10.1039/C5NR05430C ↗
47. Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors10.1002/adma.201503873 ↗