Enhanced photoelectrochemical performance of Si/TiO2 with a high atomic density SiO2 buffer layer
Source abstract
Abstract
Abstract Nanostructured Si is a promising material for photoelectrochemical water splitting, but it has the problem of being well oxidized in water. Depositing a TiO2 layer on the Si surface is an effective way to protect it from oxidation and increase light absorption. However, the lattice mismatch between Si and TiO2 acts as a defect that causes an efficiency reduction. To improve the interface and electrical properties of TiO2/Si, nitric acid oxidation of Si (NAOS) is used to form a high-density SiO2 layer and analyze the effect of photoelectrochemical properties. Due to the lattice mismatch, the TiO2/Si sample (−3.12 mA/cm2) decreases about 1.8 times when using SiO2. In TiO2/SiO2/Si samples (-5.70 mA/cm2) further decrease after post-oxidation annealing (POA) (−7.70 mA/cm2). As a result, it can be seen that by fabricating an ultra-thin high-density SiO2 layer, the lattice mismatch at the TiO2/Si interface is reduced and the photocurrent density is improved.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · TiO2 Photocatalysis and Solar Cells · Advanced Photocatalysis Techniques
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (54)
Show source-provided references
1. Silicon nanowire photocathodes for photoelectrochemical hydrogen production10.3390/nano6080144 ↗
2. Alternative energy technologies10.1038/35104599 ↗
3. Dusastre · 2010
4. Renewable energy sources and the realities of setting an energy agenda10.1126/science.1139086 ↗
5. High density n-Si/n-TiO2 core/shell nanowire arrays with enhanced photoactivity10.1021/nl8032763 ↗
6. Nanostructured bilayered thin films in photoelectrochemical water splitting–A review10.1016/j.ijhydene.2012.10.028 ↗
7. Surface engineering of nanomaterials for photo-electrochemical water splitting10.1002/smll.201803746 ↗
8. Nanowire photoelectrochemistry10.1021/acs.chemrev.9b00232 ↗
9. Energetic nanoporous silicon devices10.1109/JMEMS.2009.2023883 ↗
10. Nanoporous silicon oxide memory10.1021/nl501803s ↗
11. Protection of inorganic semiconductors for sustained, efficient photoelectrochemical water oxidation10.1016/j.cattod.2015.08.017 ↗
12. Strategies for stable water splitting via protected photoelectrodes10.1039/C6CS00918B ↗
13. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al 2 O 310.1063/1.2240736 ↗
14. A thin-film silicon based photocathode with a hydrogen doped TiO 2 protection layer for solar hydrogen evolution10.1039/C6TA07701C ↗
15. Silicon based photoelectrodes for photoelectrochemical water splitting10.1364/OE.27.000A51 ↗
16. Au nanostructure-decorated TiO2 nanowires exhibiting photoactivity across entire UV-visible region for photoelectrochemical water splitting10.1021/nl4018385 ↗
17. The design, fabrication, and photocatalytic utility of nanostructured semiconductors: focus on TiO2-based nanostructures10.2147/NSA.S9040 ↗
18. Effects of surface-modified photoelectrode on the power conversion efficiency of dye-sensitized solar cells10.1007/s12540-014-3023-4 ↗
19. Tailoring the structural, optical, and photoluminescence properties of porous silicon/TiO2 nanostructures10.1021/acs.jpcc.5b01670 ↗
20. Structural and XPS studies of PSi/TiO2 nanocomposites prepared by ALD and Ag-assisted chemical etching10.1016/j.apsusc.2015.04.172 ↗
21. Silicon/TiO2 core-shell nanopillar photoanodes for enhanced photoelectrochemical water oxidation10.1016/j.ijhydene.2017.10.033 ↗
22. D. Liu, S.J. Cho, J.-H. Seo, K. Kim, M. Kim, J. Shi, X. Yin, W. Choi, C. Zhang, J. Kim, Lattice-mismatched semiconductor heterostructures, arXiv preprint arXiv:1812.10225, (2018).
23. Thickness Measurement of Ultra-thin TiO2 Films by Mutual Calibration Method10.5757/ASCT.2020.29.3.050 ↗
24. Ultra-violet photo-response characteristics of p-Si/i-SiO2/n-ZnO heterojunctions based on hydrothermal ZnO nanorods10.1016/j.mssp.2017.04.031 ↗
25. High-κ gate dielectrics: Current status and materials properties considerations10.1063/1.1361065 ↗
26. Top-gate microcrystalline silicon TFTs processed at low temperature < 200° C10.1016/j.tsf.2005.01.070 ↗
27. Electrical Properties of Bulk Silicon Dioxide and SiO2/Si Interface Formed by Tetraethylorthosilicate-Ozone Chemical Vapor Deposition10.1149/1.1393380 ↗
28. Nitric acid oxidation of Si to form ultrathin silicon dioxide layers with a low leakage current density10.1063/1.1621720 ↗
29. Transport processes during the growth of oxide films at elevated temperature10.1103/RevModPhys.57.437 ↗
30. 1.5 nm direct-tunneling gate oxide Si MOSFET's10.1109/16.506774 ↗
31. Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's10.1109/55.568766 ↗
32. A kinetics study of the electron cyclotron resonance plasma oxidation of silicon10.1116/1.586421 ↗
33. Low temperature poly-Si TFT-LCD by excimer laser anneal10.1016/S0040-6090(00)01644-8 ↗
34. Micro-scale characterization of crystalline phase and stress in laser-crystallized poly-Si thin films by Raman spectroscopy10.1143/JJAP.38.L1312 ↗
35. Kobayashi, Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si10.1063/1.1517723 ↗
36. Spectroscopic and electrical properties of ultrathin SiO2 layers formed with nitric acid10.1016/j.susc.2003.09.016 ↗
37. Nitric acid oxidation of Si method for improvement of crystalline Si solar cell characteristics by surface passivation effect10.1016/j.solmat.2014.11.040 ↗
38. Nitric acid oxidation of 3C-SiC to fabricate MOS diodes with a low leakage current density10.1149/1.2804769 ↗
39. Nitric acid method for fabrication of gate oxides in TFT10.1016/j.apsusc.2007.10.103 ↗
40. Ag-mediated charge transport during metal-assisted chemical etching of silicon nanowires10.1021/am400510f ↗
41. Black silicon: fabrication methods, properties and solar energy applications10.1039/C4EE01152J ↗
42. S.N. Bose, Plancks gesetz und lichtquantenhypothese, (1924).10.1007/BF01327326 ↗
43. Einstein and the quantum theory10.1103/RevModPhys.51.863 ↗
44. Effects of thermal expansion coefficient mismatch on structure and electrical properties of TiO 2 film deposited on Si substrate10.1142/S0218625X08011639 ↗
45. Selection of crucible oxides in molten titanium and titanium aluminum alloys by thermo-chemistry calculations10.2298/JMMB0501113K ↗
46. K. Sridharan, R. Mariani, X. Bai, P. Xu, E. Lahoda, Development of Self-Healing Zirconium-Silicide Coatings for Improved Performance Zirconium-Alloy Fuel Cladding, in, Univ. of Wisconsin, Madison, WI (United States); Idaho National Lab.(INL…, 2018.10.2172/1430630 ↗
47. Improved interface and electrical properties by inserting an ultrathin SiO2 buffer layer in the Al2O3/Si heterojunction10.1002/adfm.201807271 ↗
48. E. Gusev, C. Cabral Jr, M. Copel, C. D’emic, M. Gribelyuk, Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications, Microelectronic Engineering, 69 (2003) 145-151.10.1016/S0167-9317(03)00291-0 ↗
49. H. Bender, T. Conard, H. Nohira, J. Pétry, O. Richard, C. Zhao, B. Brijs, W. Besling, C. Detavernier, W. Vandervorst, Physical characterisation of high-k gate stacks deposited on HF-last surfaces, in: Extended Abstracts of International Workshop on Gate Insulator. IWGI 2001 (IEEE Cat. No. 01EX537), IEEE, 2001, pp. 86-92.10.1109/IWGI.2001.967553 ↗
50. Nitric acid oxidation of silicon at~ 120° C to form 3.5-nm SiO 2/Si structure with good electrical characteristics10.1063/1.1804255 ↗
51. Suboxides at the Si/SiO2 interface: a Si2p core level study with synchrotron radiation10.1016/S0022-3093(97)00181-6 ↗
52. Chemical and electronic structure of the SiO2/Si interface10.1016/S0920-2307(86)80001-9 ↗
53. Ultra-thin silicon oxide layers on crystalline silicon wafers: Comparison of advanced oxidation techniques with respect to chemically abrupt SiO2/Si interfaces with low defect densities10.1016/j.apsusc.2016.06.090 ↗
54. Postoxidation annealing treatments to improve Si/ultrathin SiO2 characteristics formed by nitric acid oxidation10.1149/1.1809594 ↗