Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation
Source abstract
Abstract
Abstract Indium nitride (InN) nanoparticles have been deposited by plasma-assisted reactive evaporation in agminated anodic aluminum oxide (AAO) templates transplanted on heavily doped Si (1 1 1) substrates. Novel tree-like structures full of InN thorns have been prepared. The sizes of InN nanoparticles vary with the position of deposition to the AAO templates, ranging from tens to hundreds of nanometers. The prominent growth direction of the InN is along 〈0 0 2〉. For InN nanoparticles on agminated clusters of AAO templates, the average reflectivity can reach 7.9% in the range of 2.5–10 μm and less than 20% in the range of 10–15.3 μm, much lower than that of InN nanomeshes on ordinary AAO templates. The light reflection has been theoretically illustrated by using the finite-difference time-domain (FDTD) simulation to understand the mechanism of trapping infrared light by the tree-like structures.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (36)
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