Mechanic-electrical transformations in the Kelvin method
Source abstract
Abstract
Abstract To explain the initiation mechanism of alternating current in an electric circuit containing the dynamic capacitor a model of mechanic- electrical transformation is suggested to use. In such a model, electric charges disposed between the capacitor plates serve as a cause of measured signal in contrast to the contact potential difference, which is considered as the main base in the Kelvin’s model. If one of the plates moves periodically, then the conditions of the charges screening are changed and thereby the capacitor recharging current is arise. The measuring is based on compensation of the recharging current by current, which generated by a source of electromotive force (EMF). The compensation voltage depends on both the distribution of ions or dipoles over the studied surface and the charges creating the surface potential barrier. This voltage is independent on the bulk electro-physical characteristics of a solid.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Mechanical and Optical Resonators · Earthquake Detection and Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. Work function. Measurement and results
2. Many · 1971
3. Contact potential differences measurement: short history and experimental setup for classroom demonstration10.1109/TE.2003.813896 ↗
4. Kelvin probe force microscopy and its application10.1016/j.surfrep.2010.10.001 ↗
5. Matveev · 1986
6. A critique of the Kelvin method of measuring work function10.1088/0022-3735/3/7/201 ↗
7. Analysis and improvement of the Kelvin method for measuring differences in work function10.1063/1.1686287 ↗
8. A simple modification of the Kelvin method of measuring differences in work function10.1088/0022-3735/8/1/024 ↗
9. Conditions necessary to get meaningful measurements from the Kelvin method10.1088/0022-3735/15/3/017 ↗
10. 2013 · 2
11. Contactless surface charge semiconductor characterization10.1016/S0921-5107(01)00993-X ↗
12. Application of the dynamic capacitor method in semiconductor sensorics10.18524/1815-7459.2013.3.109693 ↗
13. The dependence of the physical parameters of the thermal silicon oxide films on their thickness
14. Surface photovoltage phenomena: theory, experiment and applications10.1016/S0167-5729(99)00002-3 ↗
15. The surface of silicon wafers control after chemical treatments
16. Effect of the weak form of adsorption on the Si surface charge
17. The semiconductor/electrolyte interface: a surface science approach
18. Work function data
19. Photoelectric properties and work function of cleaved germanium surfaces10.1016/0039-6028(64)90081-0 ↗
20. Comparison of the photoelectric properties of cleaved, heated, and sputtered silicon surfaces10.1063/1.1713422 ↗
21. Work function variations of gallium arsenide cleaved single crystals10.1016/0039-6028(75)90019-9 ↗
22. Electronic surface properties of uhv-cleaved III–V compounds10.1016/0039-6028(77)90096-6 ↗
23. Comparison between GaAs (110) and InP (110) surface properties induced by cleavage defects and by oxygen adsorption10.1016/0039-6028(85)90895-7 ↗
24. Fermi level pinning on (110) GaAs surfaces studied by CPD and SPV topographies10.1116/1.571103 ↗
25. Dipole effects and band offsets at semiconductor interfaces10.1103/PhysRevB.37.4528 ↗
26. Self-consistent dipole theory of heterojunction band offsets10.1103/PhysRevB.41.2813 ↗
27. Kelvin probe study of dipole formation and annihilation at the HfO2/Si interface10.1143/APEX.3.054101 ↗
28. Electron work function: a parameter sensitive to the adhesion behavior of crystallographic surfaces10.1063/1.1428766 ↗
29. Scanning Kelvin probe and surface photovoltage analysis of multicrystalline silicon10.1016/S0921-5107(01)01018-2 ↗